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Characterization of Chemically Prepared PZT Thin Films

Published online by Cambridge University Press:  16 February 2011

Bruce A. Tuttle ,
R.W. Schwartz ,
D.H. Doughty ,
J.A. Voigt  and
A.H. Carim
Bruce A. Tuttle
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
R.W. Schwartz
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
D.H. Doughty
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
J.A. Voigt
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185
A.H. Carim
Affiliation:
University of New Mexico, Albuquerque, NM
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Abstract

We have systematically varied processing parameters to fabricate PZT 53/47 thin films. Polycrystalline PZT thin films were fabricated by spin depositing Pt coated Sio2/Si substrates with alkoxide solutions. Our study focused on two process parameters: 1) heating rate and 2) excess Pb additions. We used rapid thermal processing techniques to vary heating rates from 3°C/min to 8400°C/min. Films were characterized with the following excess Pb additions: 0, 3, 5, and 10 mol% For all process variations, films with greater perovskite content had better ferroelectric properties. Our best films were fabricated using the following process parameters: an excess Pb addition of 5 mol%, a heating rate of 8400°C/min and annealing conditions of 700°C for 1 min. Films fabricated using these process conditions had a remanent polarization of 0.27 C/m2and a coercive field of 3.4 MV/m.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 159
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Jaffe, B., Cook, W., and Jaffe, H., Piezoelectric Ceramics, Academic Press, (1971).Google Scholar
2. Levett, P.D., Am. Ceram Soc. Bull., 42 [6] 348–2 (1963).Google Scholar
3. Holman, R.L. and Fulrath, R.L., J. Appl. Phys., 44 [12] 5227–6 (1973).Google Scholar
4. Sedgwick, T.O., Rapid Thermal Processing of Electronic Ceramics, Materials Research Society, Symposia Proceedings, Vol. 92, Materials Research Society, Pittsburgh, 3–12 (1987).Google Scholar
5. Powell, R.A. and Manion, M.L., Rapid Thermal Processing, Materials Research Society, Symposia Proceedings, Vol. 52 Materials Research Society, Pittsburgh, 442–73 (1986).Google Scholar
6. Chen, Y. L., Mantese, J.V., Hamdi, A.H., J. Mater. Res., 4 [5] 1065–71 (1989).Google Scholar
7. Budd, K., Dey, S., and Payne, D., Brit, Ceram, Soc, Proceedings, 36, 107–20 (1985).Google Scholar
8. Shikh, A. and Vest, G., J. Am. Ceram. Soc., 69, [9] 682–88 (1986).Google Scholar
9. Lipeles, R., Coleman, D., Leung, M., MRS Symposium Proceedings, 73, 665–70 (1986).Google Scholar
10. Martin, F., Phys, Chem, of Glasses, 6 [4] 143–7 (1965).Google Scholar
11. Tuttle, B.A., et al., Proc. of First International Ceramic Science and Technology Congress, to be published (1990).Google Scholar
12. Iijima, K., Tomita, Y., Takayama, R., and Ueda, I., J. Appl. Phys., 60 [1] 361–7 (1986).Google Scholar