Hostname: page-component-54dcc4c588-54gsr Total loading time: 0 Render date: 2025-10-04T08:54:50.987Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of a-Si:H,Cl and a-Sic:H Films Prepared by Electron Cyclotron Resonance Plasma

Published online by Cambridge University Press:  25 February 2011

S. Gangopadhyay ,
T. Trost ,
M. Kristiansen ,
C. Young ,
P. Zheng ,
C. Palsule  and
M. Pleil
S. Gangopadhyay
Affiliation:
Texas Tech University, Department of Physics, Lubbock, TX 79409
T. Trost
Affiliation:
Texas Tech University, Department of Electrical Engineering, Lubbock, TX 79409
M. Kristiansen
Affiliation:
Texas Tech University, Department of Electrical Engineering, Lubbock, TX 79409
C. Young
Affiliation:
Texas Tech University, Department of Electrical Engineering, Lubbock, TX 79409
P. Zheng
Affiliation:
Texas Tech University, Department of Electrical Engineering, Lubbock, TX 79409
C. Palsule
Affiliation:
Texas Tech University, Department of Physics, Lubbock, TX 79409
M. Pleil
Affiliation:
Texas Tech University, Department of Physics, Lubbock, TX 79409
Get access

Abstract

Microwave excited electron cyclotron resonance (ECR) plasmas have been used to fabricate a-Si:H,Cl and a-SiC:H films. By varying the absorbed microwave power, highly photoconductive a-Si:H,Cl films were obtained. The a-SiC:H films do not have appreciable photoconductivity, but they show a bright, broad continuous wave (cw) photoluminescence (PL) in the visible region under near-uv excitation. We have measured the photoluminescence decay in the picosecond range and have resolved the spectra into four distinct components. The four luminescence components may correspond to various recombination mechanisms of photogenerated electron-hole pairs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 627
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Mejia, S.R., McLeod, R.D., Pries, W., Shufnebotham, P., Thomson, D.J., White, J., Shellenberg, J., Kao, K.C. and Card, H.C., J. Non-Cryst. Solids, 77&78, 765 (1985).Google Scholar
2 Herak, T.V., Schellenberg, J.J., Shufnebotham, P.K. and Kao, K.C., J. Appl. Phys 64, 688 (1988).Google Scholar
3 Shufnebotham, P.K., Thomson, D.J. and Card, H.C., J. Appl. Phys. 64, 4398 (1988).Google Scholar
4 Dallal, S.A., Kalem, S., Bourneix, J. and Chevalier, J., Phil. Mag. B 50, 493 (1984).Google Scholar
5 Munekata, H., Shiozaki, A. and Kukimoto, H., J. Lumin. 24&25, 43 (1981).Google Scholar
6 Masumoto, Y., Shionoya, S., Munekata, H. and Kukimoto, H., J. Phys. Japan 52 (11), 3985 (1983).Google Scholar
7 Russmann, R.S. and Ogden, R., Phil. Mag. B 44 (1), 137 (1981).Google Scholar
8 Babaev, A.A., Terukov, E.I., Zhdanovich, N.S. and Musvekov, E., Sov. Phys. Semicond. 23 (4), 397 (1989).Google Scholar
9 Tsai, H., Lin, W., Sah, W.J. and Lee, S., J. Appl. Phys. 64 (4), 1910 (1988).Google Scholar
10 Pleil, M., Landis, C., Borst, W. in Fluorescence Detection II. edited by Menzel, R., (SPIE Conf. Proc.), 910, 7 (1988).Google Scholar
11 Gangopadhyay, S., Pleil, M. and Borst, W., Lumin, J.., to be published (1990).Google Scholar
12 Nakazawa, E., Mekata, H. and Kukimoto, H., Sol. State Comm., 45 (10), 925 (1983).Google Scholar