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Characteristics of N-doped Sb2Te3 Films by X-ray Diffraction and Resistance Measurement for Phase-change Memory

Published online by Cambridge University Press:  01 February 2011

You Yin ,
Naoya Higano ,
Kazuhiro Ohta ,
Akihira Miyachi ,
Masahiro Asai ,
Daisuke Niida ,
Hayato Sone  and
Sumio Hosaka
You Yin
Affiliation:
yinyou@el.gunma-u.ac.jp, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, Kiryu, 376-8515, Japan, +81-277-30-1723, +81-277-30-1707
Naoya Higano
Affiliation:
mukaino77@hotmail.co.jp, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Kazuhiro Ohta
Affiliation:
bar-ebhoth@docomo.ne.jp, Gunma University, Department of Electronic Engineering, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Akihira Miyachi
Affiliation:
a_miyachi@yahoo.co.jp, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Masahiro Asai
Affiliation:
papet_master@hotmail.com, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Daisuke Niida
Affiliation:
ready_go_danieru@hotmail.com, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin,, Kiryu, Gunma, 376-8515, Japan
Hayato Sone
Affiliation:
sone@el.gunma-u.ac.jp, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
Sumio Hosaka
Affiliation:
hosaka@el.gunma-u.ac.jp, Gunma University, Department of Nano-Material Systems, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan
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Abstract

In this paper, characterizations of sputtered undoped and nitrogen-doped Sb2Te3 (ST and STN) films by X-ray diffraction (XRD) and resistance measurements are described and their application of lateral phase-change memory (PCM) is presented. Nitrogen concentration of the films was controlled by changing the flow rate ratio of N2/Ar during sputtering. Resitivity of STN films drops by 3-4 orders of magnitude due to crystallization. Resistivity increase of the STN film (N2/Ar=0.15) at above 270°C results from phase precipitation of SbN. Experimental results reveal that the temperature of crystallization to face-centered cubic (fcc) significantly increases from below 100°C to 160–220°C with increasing the ratio of N2/Ar (in the range of 0–0.15) and crystal structure further transforms from fcc to hexagonal. At high flow rate ratio of N2/Ar (>0.15), hexagonal Te phase firstly appears at 160°C and then orthorhombic SbN appears at 290°C.

Keywords

phase transformationamorphousmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I10-11
Copyright
Copyright © Materials Research Society 2007

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References

1. Lai, S., Lowrey, T., IEDM Tech. Dig. (2001) 803.Google Scholar
2. Yin, Y., Sone, H., Hosaka, S., Jpn. J. Appl. Phys. 45, 8600 (2006).Google Scholar
3. Ovshinsky, S.R., Fritzsche, H., IEEE. Trans. Electron. Dev. 20 (1973) 91.Google Scholar
4. Oh, J.H., Ryu, S.W., Choi, B.J., Choi, S., Hwang, C.S., Kim, H.J., Hwang, S.Y., Kim, Y.J., Park, H.C., Chang, H.Y., Hong, S.K., J. Korean Phys. Soc. 49 (2006) 1173.Google Scholar
5. Yin, Y., Miyachi, A., Niida, D., Sone, H., Hosaka, S.: Jpn. J. Appl. Phys. 45 (2006) 3238.Google Scholar
6. Yin, Y., Miyachi, A., Niida, D., Sone, H., Hosaka, S., Jpn. J. Appl. Phys. 45 (2006) L726.Google Scholar
7. Hosaka, S., Miyauchi, K., Tumura, T., Yin, Y., Sone, H., IEEE Trans. Electron Devices 54, 517 (2007).Google Scholar
8. Yin, Y., Sone, H., Hosaka, S., Jpn. J. Appl. Phys. 45, 4951 (2006).Google Scholar
9. Liu, B., Song, Z., Feng, S., and Chen, B., Microelectronic Engineering 82, 168 (2005).Google Scholar