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Characteristics of Electromigration in Aluminum Interconnect Lines for Integrated Circuits

Published online by Cambridge University Press:  28 February 2011

H.-U. Schreiber
H.-U. Schreiber*
Affiliation:
Ruhr-Universität Bochum, Institut für Elektronik, D-4630 Bochum, Federal Republic of Germany
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Abstract

Reliability of Al metallization is strongly influenced by electromigration. In Al lines there are at least two competing failure modes. On the one hand, mass flow divergencies can produce stripe interruptions, and on the other hand, homogeneous mass flow, which is described by the Al drift velocity, can lead to contact openings. Test results indicate that the drift velocity limits the lifetime of metallization. Worst case failure behavior should be measured in long test lines, since there is an electromigration threshold, which affects mass flow in shorter lines. Al reliability can be improved by reducing the total mass flow.

This might be done by influencing electromigration mechanisms. Considering electromigration threshold, grain boundary and interface electromigration can be eliminated in large-grained, narrow lines. The extremely low mass flow of the remaining mechanism is beneficial for the reliability of metallization.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 249
Copyright
Copyright © Materials Research Society 1986

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References

1. Schreiber, H.-U., Grundlagen der Elektrodiffusion zur Zuverlassigkeits-verbesserung von A1-Leitbahnen fur hochintegrierte Schaltungen, (Fort-schritts-Bericht VDI, Reihe 9 Nr. 54, VDI-Verlag, Disseldorf 1985).Google Scholar
2. Lloyd, J.R. and Nakahara, S., Thin Solid Films 64, 163 (1979).Google Scholar
3. Schreiber, H.-U., Solid-St. Electron. 24, 583 (1981).Google Scholar
4. Lloyd, J.R., Proc. IEEE Reliab. Phys. Symp., p. 208 (1983).Google Scholar
5. Lloyd, J.R. and Knight, J.A., Proc. Ieee Reliab. Phys. Symp., p. 48 (1984).Google Scholar
6. Towner, J.M., Proc. IEEE Reliab. Phys. Symp., p. 81 (1985).Google Scholar
7. Grabe, B. and Schreiber, H.-U., Solid-St. Electron. 26, 1023 (1983).Google Scholar
8. Schreiber, H.-U., Solid-St. Electron. 28, 1153 (1985).Google Scholar
9. Chern, J.G.-J., Oldham, W.G., and Cheung, N., IEEE Ed–32, 1341 (1985).Google Scholar
10. Black, J.R., Proc. IEEE Reliab. Phys. Symp., p. 233 (1978).Google Scholar
11. Gargini, P.A., Tseng, C., and Woods, M.H., Proc. IEEE Reliab. Phys. Symp., p. 66 (1982).Google Scholar
12. Howard, J.K., White, J.F., and Ho, P.S., J. Appl. Phys. 49, 4083 (1978).Google Scholar
13. Vaidya, S., Sheng, T.T., and Sinha, A.K., Appl. Phys. Lett. 36, 464 (1980).Google Scholar
14. Kinsbron, E., Appl. Phys. Lett. 36, 968 (1980).Google Scholar
15. Iyer, S.S. and Ting, C.-Y., IEEE ED–31, 1468 (1984).Google Scholar
16. Black, J.R., Proc. IEEE 57, 1587 (1969).Google Scholar
17. Venables, J.D. and Lye, R.G., Proc. IEEE Reliab. Phys. Symp., p. 159 (1972).Google Scholar
18. Black, J.R., Proc. IEEE Reliab. Phys. Symp., p. 233 (1978).Google Scholar
19. Wada, T., Higuchi, H., and Ajiki, T., Proc. IEEE Reliab. Phys. Symp., p. 203 (1983).Google Scholar
20. Schlacter, M.M., Schlegel, E.S., Keen, R.S., Lathlean, R.A., and Schnable, G.L., IEEE ED–17, 1077 (1970).Google Scholar
21. Braum, L., Microelectronics and Reliab., 13, 215 (1974).CrossRefGoogle Scholar
22. Schafft, H.A. and Grant, T.C., Proc. IEEE Reliab. Phys. Symp., p. 93 (1985).Google Scholar
23. Blair, J.C., Ghate, P.B., and Haywood, C.T., Appl. Phys. Lett. 17, 281 (1970).Google Scholar
24. Schreiber, H.-U. and Grabe, B., Solid-St. Electron. 24, 1135 (1981).Google Scholar
25. Sigsbee, R.A., J. Appl. Phys. 44, 2533 (1973).Google Scholar
26. Towner, J.M. and Ven, E.P. van de, Proc. IEEE Reliab. Phys. Symp., p. 36 (1983).Google Scholar
27. Arzigian, J.S., Proc. IEEE Reliab. Phys. Symp., p. 32 (1983).Google Scholar
28. Blech, I.A., J. Appl. Phys. 47, 1203 (1976).Google Scholar
29. Schreiber, H.-U., Solid-St. Electron. 28, 617 (1985).Google Scholar
30. Blech, I.A. and Tai, K.L., Appl. Phys. Lett. 30, 387 (1977).Google Scholar
31. Partridge, J. and Littlefield, G., Proc. IEEE Reliab. Phys. Symp., p. 119 (1985).Google Scholar