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Analysis and comparison of semiconductor materials processed at IR vs. UV laser wavelengths for DRAM yield enhancement applications

Published online by Cambridge University Press:  01 February 2011

Andy E. Hooper ,
Allen Kawasaki ,
Paul Kirby ,
Robert Hainsey ,
Jeongho Bang ,
Kyeongseon Shin ,
Ki Sang Kang  and
Kungu Lee
Andy E. Hooper
Affiliation:
hoopera@esi.com, Electro Scientific Industries, 13900 NW Science Park Drive, Portland, OR, 97229-5497, United States, 503-671-5478
Allen Kawasaki
Affiliation:
kawasakia@esi.com, Electro Scientific Industries
Paul Kirby
Affiliation:
kirbyp@esi.com, Electro Scientific Industries
Robert Hainsey
Affiliation:
hainseyr@esi.com, Electro Scientific Industries, United States
Jeongho Bang
Affiliation:
kg.lee@samsung.com, Samsung Electronics, Korea, Republic of
Kyeongseon Shin
Affiliation:
kg.lee@samsung.com, Samsung Electronics, Korea, Republic of
Ki Sang Kang
Affiliation:
kg.lee@samsung.com, Samsung Electronics, Korea, Republic of
Kungu Lee
Affiliation:
kg.lee@samsung.com, Samsung Electronics, Korea, Republic of
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Abstract

This report demonstrates the effects of IR and UV laser energy on common semiconductor layer stack materials used for DRAM laser fuses. By moving from IR to UV wavelengths it is possible to significantly shrink the laser spot diameter from ∼1.6 μm to 0.8 μm. Effects and concerns for the absorption of UV energy by Si, SiO2, nitrides, and oxynitrides are also presented.

Keywords

laser ablationlaser annealingmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 890: Symposium Y – Surface Engineering for Manufacturing Applications , 2005 , 0890-Y08-04
Copyright
Copyright © Materials Research Society 2006

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References

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