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An MBE and Modeling Study of Pulsed Growth on Ge(001)

Published online by Cambridge University Press:  11 February 2011

M. A. Gallivan  and
H. A. Atwater
M. A. Gallivan
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology Pasadena, CA 91125
H. A. Atwater
Affiliation:
Division of Engineering and Applied Science, California Institute of Technology Pasadena, CA 91125
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Abstract

Ge molecular beam epitaxy (MBE) and kinetic Monte Carlo (KMC) simulations are used to study time-varying processing parameters and their effect on surface morphology. We focus here on Ge growth on highly-oriented Ge(001) substrates with reflection high-energy electron diffraction (RHEED) as a real-time sensor. KMC simulations are used as the physical model, and physical parameters are determined from growth under pulsed flux. A reduced version of the simulations is generated, and temperature trajectories are computed that minimize surface roughness subject to experimental constraints.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W16.10
Copyright
Copyright © Materials Research Society 2003

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References

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