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Amorphous Phase Formation During Ion Mixing of Ti/Si Bilayers at Elevated Temperature

Published online by Cambridge University Press:  26 February 2011

K. Maex ,
R. F. De Keersmaecker ,
M. Van rossum  and
W. F. Van Der Weg
K. Maex
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.) Kapeldreef 75, B-3030 Leuven, Belgium
R. F. De Keersmaecker
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.) Kapeldreef 75, B-3030 Leuven, Belgium
M. Van rossum
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.) Kapeldreef 75, B-3030 Leuven, Belgium
W. F. Van Der Weg
Affiliation:
Department of Technical Physics, State University Utrecht, PO Box 80000, 3508 TA Utrecht, The Netherlands
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Abstract

The amorphous phaseformation in Ti-Si bilayers upon ion mixing at elevated temperatures and in Ti-Si multilayers upon thermal treatment was studied. In the case of ion mixing with 5×1015 cm−2 Xe atoms at temperatures around 240°C a 100nm thick amorphous Ti-Si alloy is formed with a very homogeneous Ti:Si=3 :4 composition. Thermal treatment of the Ti-Si multilayer structure at similar temperatures also yields amorphous silicide layers. The results are interpreted according to the evolution in a planar binary diffusion couple, where the Si and Ti concentrations in the reacted layer are dictated by thermodynamic and kinetic arguments.

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References

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