Hostname: page-component-cb9f654ff-mwwwr Total loading time: 0 Render date: 2025-09-10T03:30:24.587Z Has data issue: false hasContentIssue false
  • English
  • Français

Accommodation of Substrate Steps in the Growth of CoSi2 on (lll)Si

Published online by Cambridge University Press:  25 February 2011

A. C. Daykin ,
C. J. Kiely  and
R. C. Pond
A. C. Daykin
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, U.K.
C. J. Kiely
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, U.K.
R. C. Pond
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, U.K.
Get access

Abstract

Thin films of CoSi2 have been grown on (111) substrates of Si, and studied using transmission electron microscopy. In 2nm films, steps initially on the substrate were found to be transformed into interfacial dislocations following deposition of the films. The Burgers vectors of the dislocations were consistent with ½<101>, which includes a component ½[111] perpendicular to the interface. The contrast behaviour of these dislocations exhibited characteristic effects, which are consistent with the short-range displacement field of the defects resembling that of a disclination dipole.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 3
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Pond, R.C., in Dislocations in solids, edited by J. Nabarro (Elsevier Science Publishers, N. York 1989) vol. 8 Chapter 38.Google Scholar
2. Aindow, M. and Pond, R.C., Phil. Mag. A, vol. 63, No.4., 667 (1990).CrossRefGoogle Scholar
3. Chen, L.J. and Tu, K.N., Materials Science Reports 6, 53 (1991).CrossRefGoogle Scholar
4. Eshelby, J.D., Solid State Phys. 3 79 (1956).CrossRefGoogle Scholar
5. Föil, H., Phys. Stat. Sol. (a) 69 779 (1982).CrossRefGoogle Scholar
6. Daykin, A.C., Kiely, C.J. and Pond, R.C., Proc. XII Int. Cong, for Electron Microscopy, vol. 4 384.Google Scholar
7. Weatherly, G.C. and Mok, T.D., Surf. Sci. 31 355 (1972).CrossRefGoogle Scholar
8. Daykin, A.C., Kiely, C.J. and Pond, R.C., Phil. Mag.(to be submitted).Google Scholar
9. Tung, R.T, Levi, A.F.J., Schrey, F. and Anzlowar, M. in Evaluation of Advanced Semiconductor in Electron Microscopy, edited by Cherns, D. (Plenum Publishing Corporation, New York, London 1989), Nato ASI, series B: Physics Vol.203 p. 187.Google Scholar