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1.95 μm Compressively Strained Ingaas/Ingaasp Quantum Well DFB Laser With Low Threshold

Published online by Cambridge University Press:  10 February 2011

Jie Dong ,
Akinoi Ubukata  and
Koh Matsumoto
Jie Dong
Affiliation:
Tsukuba Lab, Nippon Sanso Corp., 10 Ohkubo, Tsukuba, Ibarald 300-26, Japan
Akinoi Ubukata
Affiliation:
jii_don@sanso.co.jp
Koh Matsumoto
Affiliation:
Tsukuba Lab, Nippon Sanso Corp., 10 Ohkubo, Tsukuba, Ibarald 300-26, Japan
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Abstract

In this study, we demonstrate the growth of highly compressively strained InGaAs/JnGaAsP quantum well structures with large well thiclmess by low pressure metalorganic chemical vapor deposition for extending the emission wavelength of lasers. By comparing the photolumineswnce characteristics of quantum wells grown at different temperatures, it is clarified that a relatively high quality quantum well layer emittig at 2.0 μ, can be obtained at a growth temperature of 650°C. 1.95-μm-wavelength InGaAs/InGaAsP highly compressively strained quantum well DFB laser for laser spectroscopy monitors was also fabricated. Double quantum-well DFB laser operating at 1.95 μm exhibits threshold currents as low as 6 mA and 6.2 mW maximum output powers. 2.04-μm-wavelength DFB laser is also described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 643
Copyright
Copyright © Materials Research Society 1998

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References

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