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1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

Published online by Cambridge University Press:  10 February 2011

Ray Murray ,
Caroline Bryan ,
Chris Button ,
D. Spikes  and
G. Hill
Ray Murray
Affiliation:
Center for Electronic Materials and Devices, Imperial College, London, UK
Caroline Bryan
Affiliation:
Center for Electronic Materials and Devices, Imperial College, London, UK
Chris Button
Affiliation:
Department of Electrical and Electronic Engineering, University of Sheffield, Sheffield, UK
D. Spikes
Affiliation:
Center for Electronic Materials and Devices, Imperial College, London, UK
G. Hill
Affiliation:
Department of Electrical and Electronic Engineering, University of Sheffield, Sheffield, UK
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Abstract

Self-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/InGaAsP QD layer exhibit strong electroluminescence over a wide range of input currents and emit significantly more light per layer than a InGaAs/InGaAsP multi-quantum well device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 159
Copyright
Copyright © Materials Research Society 2000

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References

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