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1/f Noise in the Tunneling Current of thin Gate Oxides

Published online by Cambridge University Press:  15 February 2011

G. B. Alers ,
D. Monroe ,
K. S. Krisch ,
B. E. Weir  and
A. M. Chang
G. B. Alers
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill NJ, 07974
D. Monroe
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill NJ, 07974
K. S. Krisch
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill NJ, 07974
B. E. Weir
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill NJ, 07974
A. M. Chang
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Ave., Murray Hill NJ, 07974
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Abstract

We have observed fluctuations in the tunneling current through 3.5 nm gate oxides with a 1/f power spectrum where f is the frequency. For voltages in the direct tunneling regime we lind an anomalous current dependence of the noise relative to previous observations of noise in thin oxides. We present a simplified model for the current noise in terms of fluctuations in a trap assisted tunneling current that exists in the oxide in addition to the direct tunneling current. Current noise appears to be a very sensitive probe of trap assisted tunneling and degradation in oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 311
Copyright
Copyright © Materials Research Society 1996

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References

[1] Farmer, K. R., Saletti, R. and Buhrman, R. A., Appl. Phys. Lett 52, 1749 (1988);Google Scholar
Farmer, K. R., Rogers, C. T., and Buhrman, R. A., Phys. Rev. Lett. 58, 2255 (1987).Google Scholar
[2] Neri, B., Olivo, P., Saletti, R. and Signoretta, M., Microelec. Rel. 35, 529, (1995);Google Scholar
Neri, B., Olivo, P., and Ricco, B., Apply. Phys. Lett. 51, 2167 (1987).Google Scholar
[3] Ma, Z. J., Shin, H., Ho, P. K. and Hu, C., IEEE Elec. Dev. Lett. 15, 224 (1994).Google Scholar
[4] Schuegraf, Klaus F. and Hu, Chenming, Semi. Sci. Tech. 9, 989 (1994).Google Scholar
[5] Suzuki, Eiichi, Schroder, Dieter K., Hayashi, Yutaka, J. Appl. Phys. 60 3616 (1995).Google Scholar
[6] Cheng, X. R., Cheng, Y. C. and Liu, B. Y., J. Appl. Phys. 63, 797 (1995).Google Scholar
[7] DiMaria, D. J., Cartier, E., J. Appl. Phys 78, 3883 (1995).Google Scholar
[8] Fleetwood, D. M. and Scofield, John H., Phys. Rev. Lett. 64, 579 (1990).Google Scholar