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1 / f Noise in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

C. Parman  and
J. Kakalios
C. Parman
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455, USA
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Abstract

Measurements of co-planar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) find that the spectral density of the noise accurately obeys a 1/f frequency dependence over the frequency range of 1 Hz to 1 kHz for temperatures ranging from room temperature to 450K. The noise displays a power law dependence on the d.c. curent passing through the sample, with a temperature dependent power law exponent. In addition, the resistance of the a-Si:H as a function of time displays switching phenomena; a surprising result given the effective volume ( ∼10-6 cm3) of the sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 235
Copyright
Copyright © Materials Research Society 1991

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References

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