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Study of relaxation dynamics of photogenerated excitons in CuInS2 quantum dots

Published online by Cambridge University Press:  24 February 2014

Inderpreet Singh ,
S. Madan ,
A. Kaur ,
J. Kumar ,
P.K. Bhatnagar  and
P.C. Mathur
Inderpreet Singh*
Affiliation:
Department of Electronics, SGTB Khalsa College, University of Delhi, Delhi, 110007, India
S. Madan
Affiliation:
Department of Electronic Science, University of Delhi South Campus, New Delhi, 110021, India
A. Kaur
Affiliation:
Department of Electronic Science, University of Delhi South Campus, New Delhi, 110021, India
J. Kumar
Affiliation:
Department of Electronic Science, University of Delhi South Campus, New Delhi, 110021, India
P.K. Bhatnagar
Affiliation:
Department of Electronic Science, University of Delhi South Campus, New Delhi, 110021, India
P.C. Mathur
Affiliation:
Department of Electronic Science, University of Delhi South Campus, New Delhi, 110021, India
*
Address all correspondence to Inderpreet Singh atinderpreetsingh_05@rediffmail.com
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Abstract

CuInS2 (CIS) quantum dots (QDs) with different diameters were prepared and their optical properties were studied. The optical band gap of QDs, as estimated by absorption spectrum, was found to decrease with increase in size. The stokes shift between absorption and photoluminescence peaks was observed to be larger (>100 meV) in all the three samples. This shows that the defect states available in the forbidden gap dominates the recombination mechanism. The variation in the emission peak with QD size, however, indicates that the relaxation dynamics in CIS QDs involves both excitonic level as well as the defect states.

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Type
Research Letters
Information
MRS Communications , Volume 4 , Issue 1 , March 2014 , pp. 1 - 5
Copyright
Copyright © Materials Research Society 2014 

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