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Structure property relationships in gallium oxide thin films grown by pulsed laser deposition

Published online by Cambridge University Press:  21 November 2016

Lauren M. Garten ,
Andriy Zakutayev Open the ORCID record for Andriy Zakutayev [Opens in a new window] ,
John D. Perkins ,
Brian P. Gorman ,
Paul F. Ndione  and
David S. Ginley
Lauren M. Garten*
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Andriy Zakutayev
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
John D. Perkins
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Brian P. Gorman
Affiliation:
Colorado School of Mines, Golden, CO 80401, USA
Paul F. Ndione
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
David S. Ginley
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
*
Address all correspondence to Lauren M. Garten at Lauren.garten@nrel.gov
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Abstract

Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (−201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.

Type
Functional Oxides Research Letters
Information
MRS Communications , Volume 6 , Issue 4 , December 2016 , pp. 348 - 353
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Copyright
Copyright © Materials Research Society 2016 

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