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Electron energy response of NaI:Tl and SrI2:Eu calculated from carrier mobilities and measured first- and third-order quenching

Published online by Cambridge University Press:  16 November 2012

Joel Q. Grim ,
Qi Li ,
K.B. Ucer ,
R.T. Williams ,
G.A. Bizarri  and
W.W. Moses
Joel Q. Grim*
Affiliation:
Department of Physics, Wake Forest University, Winston-Salem, 27109 North Carolina
Qi Li
Affiliation:
Department of Physics, Wake Forest University, Winston-Salem, 27109 North Carolina
K.B. Ucer
Affiliation:
Department of Physics, Wake Forest University, Winston-Salem, 27109 North Carolina
R.T. Williams
Affiliation:
Department of Physics, Wake Forest University, Winston-Salem, 27109 North Carolina
G.A. Bizarri
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, 94720 California
W.W. Moses
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, 94720 California
*
Address all correspondence to Joel Q. Grim atgrimjq@wfu.edu
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Abstract

Intrinsic energy resolution in γ-radiation detectors is limited by nonlinear quenching that varies as the second or third power of local excitation density. Using a numerical model for local light yield depending on measured quenching rates, kinetic order, and carrier mobilities, we employ Monte Carlo simulations of energy deposited at each local excitation density to calculate electron energy response that can be directly compared with Compton coincidence and K-dip experiments. Agreement is found for NaI:Tl and SrI2:Eu using thermalized carrier diffusion and linear quenched fraction deduced from total light yield. This lays the groundwork for testing refinements with recent hot-electron extensions of the model.

Type
Research Letters
Information
MRS Communications , Volume 2 , Issue 4 , December 2012 , pp. 139 - 143
Copyright
Copyright © Materials Research Society 2012

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