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Effect of growth temperature on the key properties of aluminum-doped zinc oxide thin films prepared by atomic layer deposition

Published online by Cambridge University Press:  27 August 2019

Emine Güneri  and
Bethanie Stadler
Emine Güneri*
Affiliation:
Education Faculty, Erciyes University, 38039 Kayseri, Turkey
Bethanie Stadler
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA
*
Address all correspondence to Emine Güneri at emineeguneri@gmail.com
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Abstract

Aluminum-doped zinc oxide films were prepared by atomic layer deposition using diethylzinc, trimethylaluminum, and water. High-purity water was used with low vacuum. The effect of growth temperature on characteristics of the films was investigated. The crystallinity was improved as growth temperature was increased from 180 to 235 °C, with the grain sizes increasing from 32.830 to 47.020 nm. The films possessed high transparency with a 95% transmission window blue shifted with growth temperature. This shift was seen in the energy-band gaps which changed from 3.46 to 3.68 eV, leading to a decreased resistivity from 1.52 × 10−5 to 1.28 × 10−5 Ω cm.

Type
Research Letters
Information
MRS Communications , Volume 9 , Issue 3 , September 2019 , pp. 1105 - 1110
Copyright
Copyright © Materials Research Society 2019 

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