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Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits

Published online by Cambridge University Press:  15 June 2012

Meg Mahat ,
Antonio Llopis ,
Richard D. Schaller ,
Ian Watson ,
Sergio Periera  and
Arup Neogi
Meg Mahat
Affiliation:
Department of Physics, University of North Texas, Denton, Texas 76203
Antonio Llopis
Affiliation:
Department of Physics, University of North Texas, Denton, Texas 76203
Richard D. Schaller
Affiliation:
Argonne National Laboratory, Center for Nanoscale Materials, Argonne, Illinois 60439
Ian Watson
Affiliation:
SUPA, Institute of Photonics, University of Strathclyde, Glasgow, UK
Sergio Periera
Affiliation:
CICECO, Universidade de Aveiro, 3810-193 Aveiro, Portugal
Arup Neogi*
Affiliation:
Department of Physics, University of North Texas, Denton, Texas 76203
*
Address all correspondence to A. Neogi at arup@unt.edu
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Abstract

Ultrafast differential transmission spectroscopy was employed to study the carrier dynamics in InGaN/GaN multiple quantum wells with high inverted hexagonal pits density due to threading dislocation. By monitoring the temporal evolution of the excitonic absorption spectrum, a reduction of the quantum-confinement Stark shift was observed due to the photo-induced in-well field screening at low carrier densities and excitonic absorption quenching at high carrier densities. By comparing the differential absorption spectra at various injected carrier densities, the in-well field screening effect was distinguished from excitonic bleaching.

Type
Research Letters
Information
MRS Communications , Volume 2 , Issue 2 , June 2012 , pp. 55 - 60
Copyright
Copyright © Materials Research Society 2012

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References

1.Satake, A. and Masumoto, Y.: Two dimensional exciton dynamics and gain formation processes in InxGa1−xN multiple quantum wells. Phys. Rev. B 60, 16660 (1999).Google Scholar
2.Hangleiter, A., Hitzel, F., Netzel, C., Fuhrmann, D., Rossow, U., Ade, G., and Hinze, P.: Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. Phys. Rev. Lett. 95, 127402 (2005).CrossRefGoogle ScholarPubMed
3.Netzel, C., Bremers, H., Hoffmann, L., Fuhrmann, D., Rossow, U., and Hangleiter, A.: Emission and recombination characteristics of Ga1−xInxN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits. Phys. Rev. B 76, 155322 (2007).Google Scholar
4.Kaneta, A., Hashimoto, T., Nishimura, K., and Kawakami, Y.: Visualization of the local carrier dynamics in an InGaN quantum well using dual-probe scanning near-field optical microscopy Appl. Phys. Express 3, 102102 (2010).Google Scholar
5.Llopis, T., Lin, J., Pereira, S., and Neogi, A.: Carrier dynamics in UV InGaN multiple quantum well inverted hexagonal pits. IEEE J. Special Topics Quantum Electron. 15, 1400 (2009).CrossRefGoogle Scholar
6.Girão, A.V., Martins, M., Pereira, S., Trindade, T., Zhachuk, R., Kazan, M., and Watson, I.M.: Noble metal nanocrystals at the surface of nitride semiconductors: Synthesis, deposition and surface characterization. J. Nanosci. Nanotechnol. 10, 4, 2574 (2010).CrossRefGoogle ScholarPubMed
7.Smith, D.L. and Mailhiot, C.: Optical properties of strained-layer superlattices with growth axis along [111]. Phys. Rev. Lett. 58, 1246 (1987).CrossRefGoogle ScholarPubMed
8.Huang, X.R., Cartwright, A.N., Harken, D.R., McCallum, D.S., Smirl, A.L., Sánchez-Rojas, J.L., Sacedón, A., Calleja, E., and Muñoz, E.: Per-carrier nonlinear optical response of [111]-oriented piezoelectric InGaAs/GaAs multiple quantum wells. J. Appl. Phys. 79, 417 (1996).CrossRefGoogle Scholar
9.Özgür, Ü. and Everitt, H.O.: Ultrafast carrier relaxation in GaN, In0.05Ga0.95N, and an In0.07Ga0.93N/In0.12Ga0.88N multiple quantum well. Phys. Rev. B 67, 155308 (2003).CrossRefGoogle Scholar
10.McCallum, S., Huang, X.R., Dawson, M.D., Boggess, T.F., Smirl, A.L., Hasenberg, T.C., and Kost, A.: Picosecond optical nonlinearities in a strained InAs/GaAs hetero n-i-p-i structure. J. Appl. Phys. 71, 929 (1991).Google Scholar
11.Huang, X.R., Harken, D.R., Cartwright, A.N., Smirl, A.L., Sánchez-Rojas, J.L., Sacedón, A., Calleja, E., and Muñoz, E.: In-well screening nonlinearities in piezoelectric multiple quantum wells. J. Appl. Phys. 67, 950 (1995).Google Scholar
12.McCallum, D.S., Huang, X.R., Dawson, M.D., Boggess, T.F., Hasenberg, T.C., and Kost, A.: Optical nonlinearities and ultrafast charge transport in all-binary InAs/GaAs strained hetero n-i-p-i' s. J. Appl. Phys. 70, 6891 (1991).CrossRefGoogle Scholar
13.Chen, F., Cheung, M.C., Sweeney, P.M., Kirkey, W.D., Furis, M., and Cartwright, A.N.: Ultrafast differential transmission spectroscopy of excitonic transitions in InGaN/GaN multiple quantum wells. J. Appl. Phys. 93, 4933 (2003).Google Scholar
14.Pereira, S.M.S., Martin, M.A., Trindade, T., Watson, I.M., Zhu, D., and Humphreys, C.J.: Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures. Adv. Mater. 20, 1038 (2008).Google Scholar
15.Fiorentini, V., Bernardini, F., Della Sala, F., Di Carlo, A., and Lugli, P.: Effects of macroscopic polarization in III-V nitride multiple quantum wells. Phys. Rev. B 60, 8849 (1999).CrossRefGoogle Scholar
16.Alfano, R.R., editor: The Supercontinuum Laser Source (Springer-Verlag, Berlin, 1999).Google Scholar
17.Chen, F. and Cartwright, A.N.: Out-of-well carrier screening in a strained InxGa1−xN/GaN multiple quantum well structure. Phys. Rev. B 68, 233304 (2003).CrossRefGoogle Scholar
18.Choi, C.K., Lam, J.B., Gainer, G.H., Shee, S.K., Krasinski, J.S., Song, J.J., and Chang, Y.C.: Polarization dependence of the excitonic optical Stark effect in GaN. Phys. Rev. B 65, 155206 (2002).CrossRefGoogle Scholar
19.Turchinovich, D., Uhd Jepsen, P., Monozon, B.S., Koch, M., Lahmann, S., Rossow, U., and Hangleiter, A.: Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation. Phys. Rev. B 68, 241307(R) (2003).Google Scholar