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Emitting modification in Si-rich-SiNx films versus silicon nitride compositions

Published online by Cambridge University Press:  27 June 2017

T. Torchynska ,
G. Polupan ,
L. Khomenkova  and
A. Slaoui
T. Torchynska*
Affiliation:
Instituto Politécnico Nacional, ESFM, México DF, 07738, México
G. Polupan
Affiliation:
Instituto Politécnico Nacional, ESIME, México DF, 07320, México
L. Khomenkova*
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics at NASU, Kyiv, 03028, Ukraine
A. Slaoui
Affiliation:
ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2, France
*
Address all correspondence T. Torchynska, L. Khomenkova at ttorch@esfm.ipn.mx; khomen@ukr.net
Address all correspondence T. Torchynska, L. Khomenkova at ttorch@esfm.ipn.mx; khomen@ukr.net
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Abstract

SiNx films were grown by plasma-enhanced chemical vapor deposition on Si substrates with the composition controlled by the flow ratio R: ammonia to silane in the range R = 0.45–1.0. Then SiNx films were annealed at 1100 °C for 30 min to form Si-quantum dots (QDs). Fourier transform infrared spectroscopy study permits estimating SiNx compositions. Photoluminescence (PL) spectra of SiNx films included bands peaked at: 2.87–2.99, 2.42–2.54, 2.10–2.25, and 1.47–1.90 eV. Former three PL bands are attributed to emission via defects in SiNx films. Fourth PL band is assigned to exciton emission in Si QDs, detected by transmission electron microscopy study in films grown at R ≤ 0.67. The nature of non-radiative defects in SiNx films is discussed as well.

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Type
Research Letters
Information
MRS Communications , Volume 7 , Issue 2 , June 2017 , pp. 280 - 285
Copyright
Copyright © Materials Research Society 2017 

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