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Emitting modification in Si-rich-SiN x films versus silicon nitride compositions

Published online by Cambridge University Press:  27 June 2017

T. Torchynska ,
G. Polupan ,
L. Khomenkova  and
A. Slaoui
T. Torchynska*
Affiliation:
Instituto Politécnico Nacional, ESFM, México DF, 07738, México
G. Polupan
Affiliation:
Instituto Politécnico Nacional, ESIME, México DF, 07320, México
L. Khomenkova*
Affiliation:
V. Lashkaryov Institute of Semiconductor Physics at NASU, Kyiv, 03028, Ukraine
A. Slaoui
Affiliation:
ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2, France
*
Address all correspondence T. Torchynska, L. Khomenkova at ttorch@esfm.ipn.mx; khomen@ukr.net
Address all correspondence T. Torchynska, L. Khomenkova at ttorch@esfm.ipn.mx; khomen@ukr.net
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Abstract

SiN x films were grown by plasma-enhanced chemical vapor deposition on Si substrates with the composition controlled by the flow ratio R: ammonia to silane in the range R = 0.45–1.0. Then SiN x films were annealed at 1100 °C for 30 min to form Si-quantum dots (QDs). Fourier transform infrared spectroscopy study permits estimating SiN x compositions. Photoluminescence (PL) spectra of SiN x films included bands peaked at: 2.87–2.99, 2.42–2.54, 2.10–2.25, and 1.47–1.90 eV. Former three PL bands are attributed to emission via defects in SiN x films. Fourth PL band is assigned to exciton emission in Si QDs, detected by transmission electron microscopy study in films grown at R ≤ 0.67. The nature of non-radiative defects in SiN x films is discussed as well.

Type
Research Letters
Information
MRS Communications , Volume 7 , Issue 2 , June 2017 , pp. 280 - 285
Copyright
Copyright © Materials Research Society 2017 

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