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Atomic-level insights through spectroscopic and transport measurements into the large-area synthesis of MoS2 thin films

Published online by Cambridge University Press:  15 August 2018

Hassana Samassekou ,
Asma Alkabsh ,
Kenneth Stiwinter ,
Avinash Khatri  and
Dipanjan Mazumdar
Hassana Samassekou
Affiliation:
Department of Physics, Southern Illinois University, Carbondale, IL 62901, USA
Asma Alkabsh
Affiliation:
Department of Physics, Southern Illinois University, Carbondale, IL 62901, USA
Kenneth Stiwinter
Affiliation:
Department of Physics, Southern Illinois University, Carbondale, IL 62901, USA
Avinash Khatri
Affiliation:
Department of Physics, Southern Illinois University, Carbondale, IL 62901, USA
Dipanjan Mazumdar*
Affiliation:
Department of Physics, Southern Illinois University, Carbondale, IL 62901, USA
*
Address all correspondence to Dipanjan Mazumdar at dmazumdar@siu.edu
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Abstract

Several structure–property relationships are reported in large-area MoS2 thin films to understand the effect of sulfur vacancies along with complementary first-principles calculations. X-ray diffraction and reflectivity measurements demonstrated that sputtered MoS2 followed by a high-temperature sulfurization produced sharp film–substrate interface along with high crystalline order. Spectroscopic and transport measurements showed that removal of sulfur vacancies promoted A–B excitons, strong in-plane Raman modes, a sharp increase in dc resistivity, and strong photo-conducting behavior. We have clearly demonstrated that a hybrid method using magnetron sputtering can provide high-quality few-layer transition metal dichalcogenide films.

Type
Research Letters
Information
MRS Communications , Volume 8 , Issue 3 , September 2018 , pp. 1328 - 1334
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Copyright
Copyright © Materials Research Society 2018 

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