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Semiconductor materials for x-ray detectors

Published online by Cambridge University Press:  09 June 2017

David Pennicard ,
Benoît Pirard ,
Oleg Tolbanov  and
Krzysztof Iniewski
David Pennicard
Affiliation:
X-Spectrum GmbH, Germany; and Deutsches Elektronen-Synchrotron, Germany; david.pennicard@x-spectrum.de
Benoît Pirard
Affiliation:
Mirion Technologies, France; bpirard@mirion.com
Oleg Tolbanov
Affiliation:
Tomsk State University, Russia; top@mail.tsu.ru
Krzysztof Iniewski
Affiliation:
Redlen Technologies Inc., Canada; kris.iniewski@gmail.com
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Abstract

Semiconductor x-ray detectors are widely used in experiments at synchrotron facilities. The performance of these detectors depends heavily on the semiconductor material properties. Improvements in crystal growth and device processing are key to developing “high-Z” (high atomic number) semiconductors for hard x-ray detection. Germanium is the most mature high-Z semiconductor and is widely used in x-ray detectors, but it has the drawback of needing to be cooled during operation, often to cryogenic temperatures. Compound semiconductors with wide bandgaps can be used at room temperature, but crystal defects can degrade their performance. Gallium arsenide currently shows poorer energy resolution, but its comparative robustness and stability over time make it a strong option for imaging detectors. Cadmium telluride and cadmium zinc telluride both provide higher detection efficiencies at extreme x-ray energies as well as good energy resolution; the main challenge with these materials is maintaining consistent behavior under a high x-ray flux.

Keywords

devicesmicroelectronicssemiconductingsensorx-ray diffraction
Type
Research Article
Information
MRS Bulletin , Volume 42 , Issue 6: Next-Generation Materials for Synchrotron Radiation , June 2017 , pp. 445 - 450
Copyright
Copyright © Materials Research Society 2017 

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