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Integrated circuits in silicon carbide for high-temperature applications

Published online by Cambridge University Press:  08 May 2015

Carl-Mikael Zetterling
Carl-Mikael Zetterling*
Affiliation:
KTH Royal Institute of Technology, Sweden; bellman@kth.se
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Abstract

High-temperature electronic applications are presently limited to a maximum operational temperature of 225°C for commercial integrated circuits (ICs) using silicon. One promise of silicon carbide (SiC) is high-temperature operation, although most commercial efforts have targeted high-voltage discrete devices. Depending on the technology choice, several processing challenges are involved in making ICs using SiC. Bipolar, metal oxide semiconductor field-effect transistors, and junction field-effect transistor technologies have been demonstrated in operating temperatures of up to 600°C. Current technology performance and processing challenges relating to making ICs in SiC are reviewed in this article.

Keywords

semiconductingdevicesmicroelectronicselectrical properties

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Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 5: Power Electronics with Wide Bandgap Materials , May 2015 , pp. 431 - 438
Copyright
Copyright © Materials Research Society 2015 

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References

Cressler, J.D., Mantooth, H.A., Eds., Extreme Environment Electronics (CRC Press, UK, 2013).Google Scholar
Zetterling, C.-M., Ed., Process Technology for Silicon Carbide Devices (IEE, London, 2002).CrossRefGoogle Scholar
Kimoto, T., Cooper, J.A., Fundamentals of Silicon Carbide Technology (Wiley, New York, 2014).CrossRefGoogle Scholar
Ryu, S.-H., Kornegay, K.T., Cooper, J.A. Jr., Melloch, M.R., IEEE Trans. Electron Devices 45, 45 (1998).Google Scholar
Young, R.A.R., Clark, D., Cormack, J.D., Murphy, A.E., Smith, D.A., Thompson, R.F., Ramsay, E.P., Finney, S., Mater. Sci. Forum 740–742, 1065 (2013).CrossRefGoogle Scholar
Xie, W., Cooper, J.A. Jr., Melloch, M.R., IEEE Electron Device Lett. 15, 455 (1994).CrossRefGoogle Scholar
Ghandi, R., Chen, C.-P., Yin, L., Zhu, X., Yu, L., Arthur, S., Ahmad, F., Sandvik, P., IEEE Electron Device Lett. 35, 1206 (2014).CrossRefGoogle Scholar
Lee, J.-Y., Singh, S., Cooper, J.A. Jr., IEEE Trans. Electron Devices 55, 1946 (2008).CrossRefGoogle Scholar
Lanni, L., Malm, B.G., Östling, M., Zetterling, C.-M., IEEE Electron Device Lett. 34, 1091 (2013).CrossRefGoogle Scholar
Hedayati, R., Lanni, L., Rodriguez, S., Malm, B.G., Rusu, A., Zetterling, C.-M., IEEE Electron Device Lett. 35, 693 (2014).Google Scholar
Neudeck, P.G., Garverick, S.L., Spry, D.J., Chen, L.-Y., Beheim, G.M., Krasowski, M.J., Mehregany, M., Phys. Status Solidi A 206, 2329 (2009).CrossRefGoogle Scholar
Patil, A.C., Xiao-An, F., Mehregany, M., Garverick, S.L., Proc. IEEE Custom Integrated Circuits Conf. 73 (2009).Google Scholar
Chen, L.-Y., Spry, D., Neudeck, P.G., International Conference on High Temperature Electronics (2006).Google Scholar
Gaska, R., Gaevski, M., Deng, J., Jain, R., Simin, G., Shur, M., Proc. Eur. Solid State Device Res. Conf. 142 (2014).Google Scholar
Lanni, L., Malm, B.G., Östling, M., Zetterling, C.-M., IEEE Electron Device Lett. 35, 428 (2014).CrossRefGoogle Scholar
Lanni, L., “Silicon Carbide Bipolar Technology for High Temperature Integrated Circuits,” PhD thesis, KTH Royal Institute of Technology, Sweden (2014), available athttp://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-145401.Google Scholar