Hostname: page-component-5447f9dfdb-97xxw Total loading time: 0 Render date: 2025-07-30T01:55:01.068Z Has data issue: false hasContentIssue false
  • English
  • Français

Diamond Growth at Low Pressures

Published online by Cambridge University Press:  29 November 2013

J.C. Angus ,
F.A. Buck ,
M. Sunkara ,
T.F. Groth ,
C.C. Hayman  and
R. Gat
Get access

Extract

Diamond synthesis has attracted attention ever since it was established in 1797 that diamond is a crystalline form of carbon. Initially, synthesis was attempted at high pressures because diamond is the densest carbon phase. As understanding of chemical thermodynamics developed through the 19th and 20th centuries, the pressure-temperature range of diamond stability was explored. These efforts culminated in the announcement in 1955 of a process for diamond synthesis with a molten transition metal solvent-catalyst at pressures where diamond is thermo-dynamically stable. Worldwide sales of synthetic diamond now approach 330 million carats (73 tons) with a market price of between $500 million to $1 billion.

Over the past 40 years a parallel effort has been directed toward the growth of diamond at low pressures, where it is metastable. Although diamond was successfully produced, low-pressure synthesis was plagued by extremely low growth rates. Recent developments have led to much higher growth rates, creating great interest in the field. Polycrystalline diamond films can now be produced on a variety of substrates at linear growth rates of tens to hundreds of micrometers per hour. In addition, the recognition of an entirely new class of solids, the so-called “diamondlike” carbons and hydrocarbons has arisen from this work. This article will discuss both crystalline diamond grown at low pressure and the diamondlike phases.

The interest in diamond is driven by its extreme properties, summarized in Table I. Diamond stands alone as the densest (number density), strongest (elastic modulus), and hardest known material.

Information

Type
Technical Features
Information
MRS Bulletin , Volume 14 , Issue 10 , October 1989 , pp. 38 - 47
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1.Bundy, F.P., Hall, H.T., Strong, H.M., and Wentorf, R.H., Nature 176 (1955) p. 51.CrossRefGoogle Scholar
2.Seal, M.J., personal communication.Google Scholar
3.DeVries, R.C., Ann. Rev. Mater. Sci. 17 (1987) p. 161.CrossRefGoogle Scholar
4.Badzian, A.R. and DeVries, R.C., Mater. Res. Bull. 23 (1988) p. 385.CrossRefGoogle Scholar
5.Angus, J.C. and Hayman, C.C., Science 241 (1988) p. 913.CrossRefGoogle Scholar
6.Spear, K.E., J. Am. Ceram. Soc. 72 (1989) p. 171.CrossRefGoogle Scholar
7.Lux, B. and Haubner, R., “Low Pressure Synthesis of Hard Coatings,” Proc. 12th Intl. Plansee-Seminar 1989; to be published in Intl. Refractory Metals and Hard Materials, Sept. 1989.Google Scholar
8.Angus, J.C., Proc. of Symposium on Diamond and Diamondlike Materials, 175th Meeting of the Electrochemical Society, Los Angeles, CA, May 8, 1989.Google Scholar
9.Field, J.E., Properties of Diamond (Academic Press, London, 1979), p. 647–648.Google Scholar
10.Eversole, W.G., U.S. Patents 3,030,187 and 3,030,188 (1962).Google Scholar
11.Angus, J.C., Will, H.A., and Stanko, W.S., J. Appl. Phys. 39 (1968) p. 2915; J.C. Angus, N.C. Gardner, D.J. Poferl, S.P. Chauhan, T.J. Dyble, and P. Sung, Sin. Almazy 3 (1971) p. 38, presented at International Conference on Applications of Synthetic Diamonds in Industry, Kiev, USSR, 1971.CrossRefGoogle Scholar
12.Deryagin, B.V., Ryabov, V.A., Fedoseev, D.V., Spitsyn, B.V., Lykyanovich, V.M., and Uspenskaya, K.S., Second All-Union Symposium on Processes for Nucleation and Growth of Crystals and Films of Semiconducting Compounds, Novosibirsk, USSR, May 12–16, 1969.Google Scholar
13.Deryagin, B.V., Spitsyn, B.V., Builov, L.L., Klochkov, A. A., Gorodetski, A.E., and Smolyaninov, A.V., Dokl. Akad. Nauk SSSR 231 (1976) p. 333; B.V. Spitsyn, L.L. Bouilov, B. V. Deryagin, J. Cryst. Growth 52 (1981) p. 219.Google Scholar
14.Matsumoto, S., Sato, Y., Kamo, M., and Setaka, N., Jpn. J. Appl. Phys. Part 2, 21 (1982) p. L183; S. Matsumoto, Y. Sato, M. Tsutsumi, and N. Setaka, J. Mat. Sci. 17 (1982) p. 3106; M. Kamo, Y. Sato, S. Matsumoto, and S. Setaka, J. Cryst. Growth 62 (1983) p. 642; Y. Matsui, S. Matsumoto, and N. Setaka, J. Mat. Sci. Lett. 2 (1983) p. 532.CrossRefGoogle Scholar
15.Hirose, Y. and Kondo, N., Program and Abstracts, Japan Applied Physics 1988 Meeting, March 29, 1988, p. 434; Y. Hirose, Proc. of the First International Conference on the New Diamond Science and Technology, Tokyo, Japan, October 24–26, 1988.Google Scholar
16.Burgemeister, E.A., Ammerlaan, C.A.J., and Davies, G., J. Phys. C 13 (1980) p. L691.Google Scholar
17.Kitabatake, M. and Wasa, K., J. Appl. Phys. 58 (1985) p. 1693.CrossRefGoogle Scholar
18.Williams, B.E. and Glass, J.T., J. Mater. Res. 4 (1989) p. 373.CrossRefGoogle Scholar
19.Wagner, R.S., Acta Met. 8 (1958) p. 57; A.I. Bennett and R.L. Longini, Phys. Rev. 116 (1959) p. 53; D.R. Hamilton and R.G. Seidensticker, J. Appl. Phys. 31 (1960) p. 1165.CrossRefGoogle Scholar
20.Celii, F.G., Pehrsson, P.E., Wang, H.T., and Butler, J.E., Appl. Phys. Lett. 52 (1988) p. 2043.CrossRefGoogle Scholar
21.Harris, S.J., Weiner, A.M., and Perry, T.A., Appl. Phys. Lett. 53 (1988) p. 1605.CrossRefGoogle Scholar
22.Frenklach, M. and Spear, K.E., J. Mater. Res. 3 (1988) p. 133; D. Huang, M. Frenklach and M. Maroncelli, J. Phys. Chem. 92 (1988) p. 6379.CrossRefGoogle Scholar
23.Matsumoto, S. and Matsui, Y., J. Mat. Sci. 18 (1983) p. 1785.CrossRefGoogle Scholar
24.Angus, J.C., Hoffman, R.W. and Schmidt, P.H., Proc. of the First International Conference on the New Diamond Science and Technology, Tokyo, Japan, October 24–26, 1988.Google Scholar
25.Vakil, H.B., Banholzer, W.F., Kehl, R.J. and Spiro, C.L., Proc. of ACS Diamond Symposium, Dallas, TX, April 1989; GE Res. and Dev. Report 89CRD064, April 1989.Google Scholar
26.Aisenberg, S. and Chabot, R., J. Appl. Phys. 42 (1971) p. 2953.CrossRefGoogle Scholar
27.Angus, J.C., Thin Solid Films 142 (1986) p. 145.CrossRefGoogle Scholar
28.Angus, J.C. and Jansen, F., J. Vac. Sci. Technol. A6 (May/June 1988) p. 1778.CrossRefGoogle Scholar
29.Phillips, J.C., Phys. Rev. Lett. 42 (1979) p. 153.Google Scholar
30.Robertson, J. and O'Reilly, E.P., Phys. Rev. B 35 (1987) p. 2946; J. Robertson, Adv. Phys. 35 (1986) p. 317; J.L. Bredas and G.B. Street, J. Phys. C 18 (1985) p. L651.CrossRefGoogle Scholar
31.Tamor, M.A., Haire, J.A., Wu, C.H., and Hass, K.C., Appl. Phys. Lett. 51 (1989) p. 123.CrossRefGoogle Scholar
32.Tamor, M.A., personal communication.Google Scholar
33.Martin, P.J., Filipczuk, S.W., Netterfield, R.P., Field, J.S., Whitnall, D.F., and McKenzie, D.R., J. Mat. Sci. Lett. 7 (1988) p. 410.CrossRefGoogle Scholar
34.Hirvonen, J., to be published.Google Scholar