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MoOx Hole Collection Layer for a-Si:H Based PhotovoltaicCells

Published online by Cambridge University Press:  24 February 2016

Erenn Ore ,
Jimmy Melskens ,
Arno Smets ,
Miro Zeman  and
Gehan Amaratunga
Erenn Ore*
Affiliation:
Department Of Engineering, University Of Cambridge, Cambridge CB3 0FA, United Kingdom. Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Jimmy Melskens
Affiliation:
Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Arno Smets
Affiliation:
Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Miro Zeman
Affiliation:
Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands.
Gehan Amaratunga
Affiliation:
Department Of Engineering, University Of Cambridge, Cambridge CB3 0FA, United Kingdom.
*
*(Email: renn1313@yahoo.com)
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Abstract

An experimental investigation to verify the suitability of MoOx as thehole collection layer for a-Si:H based thin film photovoltaic cell is carriedout. The photovoltaic cell investigated has the structure of MoOx(hole collection layer) / intrinsic a-Si:H (photoactive layer) / phosphorusdoped a-Si:H (electron collection layer) / Ag (back reflector electrode); alldeposited in that order onto an Asahi glass (type U) substrate, which is alsoacting as the transparent front electrode for the cell. The effects of differentpost deposition annealing temperatures are investigated. The highest efficiencyvalues are obtained for the cells annealed at 120°C. For thephotovoltaic cell with 100 nm thick photoactive layer, the highest efficiency ismeasured to be 6.46 % with an open current voltage (Voc) of 827 mVand a short current density of (Jsc) of 10.44 mA/cm2. Forthe photovoltaic cell with 300 nm thick photoactive layer, the highestefficiency is measured to be 7.93 % with Voc of 818 mV andJsc of 13.24 mA/cm2. The efficiency measurements arecarried out under AM1.5 test conditions. Jsc values are correctedaccording to the external quantum efficiency measurements of the cells in theAM1.5 photovoltaic spectrum region between 270 nm and 800 nm. Compared to thereference cell with boron doped μ-SiOx layer acting as thehole collection layer, the cell with MoOx hole collection layer hassimilar FF, lower Voc, higher Jsc for wavelength up to thegreen light region of the AM1.5 spectrum and lower Jsc for the longerwavelengths.

Keywords

amorphousSioxide

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Type
Articles
Information
MRS Advances , Volume 1 , Issue 14: Energy and Sustainability , 2016 , pp. 977 - 983
Copyright
Copyright © Materials Research Society 2016 

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