Hostname: page-component-54dcc4c588-r5qjk Total loading time: 0 Render date: 2025-10-04T06:25:57.969Z Has data issue: false hasContentIssue false
  • English
  • Français

Local probing of the interfacial strength in InP/Sisubstructures

Published online by Cambridge University Press:  14 December 2015

Eric Le Bourhis ,
Konstantin Pantzas ,
Gilles Patriarche ,
Anne Talneau ,
Isabelle Sagnes  and
David Troadec
Eric Le Bourhis*
Affiliation:
Institut P’, CNRS - Université de Poitiers – ENSMA - UPR 3346, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P. 30179, 86962 Futuroscope-Chasseneuil Cedex, France
Konstantin Pantzas
Affiliation:
Institut P’, CNRS - Université de Poitiers – ENSMA - UPR 3346, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P. 30179, 86962 Futuroscope-Chasseneuil Cedex, France Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
Gilles Patriarche
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
Anne Talneau
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
Isabelle Sagnes
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France
David Troadec
Affiliation:
Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Avenue Poincaré, 59652 Villeneuve d'Ascq cedex, France
*
*(Email: Eric.le.bourhis@univ-poitiers.fr)
Get access

Abstract

InP membranes have been bonded oxide mediated onto a patterned and unpatterned Sisubstrate. Indentation is shown to allow local testing on patterned areas. Bothresponses on patterned and unpatterned are compared and placed in reference tooxide free bonded membranes. Delamination of the membrane was observed to dependon the presence of patterns in the Silicon substrate. It occurs when theindenting load reached 55 mN for an oxide mediated bonded unpatterned structureand 42 mN for an oxide mediated bonded patterned one. This is in both casesbelow the value of 80 mN obtained for an oxide free bonded membrane(unpatterned). Weibull analysis of these events yielded a modulus m of magnitude6 to 10, indicating that delamination fracture is relatively predictable with aweaker resistance obtained in patterned oxide mediated bonding. Delamination ofthe membrane is the result of constraint of plastic flow by the InP/Siinterface. Membrane rotation is induced and increases with the indentation load,until it is sufficient to initiate and propagate an interfacial crack.

Keywords

nano-indentationbondingsemiconducting

Information

Type
Articles
Information
MRS Advances , Volume 1 , Issue 12: Mechanical Behavior and Failure of Materials , 2016 , pp. 779 - 784
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

Roelkens, G., Van Campenhout, J., Brouckaert, J., Van Thourhout, D., Baets, R., Rojo Romeo, P., Regreny, P., Kazmierczak, A., Seassal, C., Letartre, X., Hollinger, G., Fedeli, J.M., Di Cioccio, L., Lagahe-Blanchard, C., Materials Today 10, 36, 2007.Google Scholar
Fang, A. W., Park, H., Kuo, Y.-h., Jones, R., Cohen, O., Liang, D., Raday, O., Sysak, M. N., Paniccia, M. J., Bowers, J. E., Materials Today 10, 28, 2007.Google Scholar
Van Campenhout, J., Rojo Romeo, P., Regreny, P., Seassal, C., Van Thourhout, D., Verstuyft, S., Di Cioccio, L., Fedeli, J.-M., Lagahe, C., Baets, R., Optics Express, 15, 6744, 2007.Google Scholar
Talneau, A., Roblin, C., Itawi, A., Mauguin, O., Largeau, L., Beaudouin, G., Sagnes, I., Patriarche, G., Pang, C., Benisty, H., Appl. Phys. Lett., 102, 212101, 2013Google Scholar
Le Bourhis, E., Glass Mechanics and Technology, 2nd Edition (Wiley-VCH, Weinheim, 2014).Google Scholar
Fournel, F., Continni, L., Morales, C., Da Fonseca, J., Moriceau, H., Rieutord, F., Barthelemy, A., Radu, I., J. Appl. Phys., 111, 104907 (2012)Google Scholar
Pantzas, K., Patriarche, G., Le Bourhis, E., Troadec, D., Itawi, A., Beaudouin, G., Sagnes, I., Talneau, A., Appl. Phys. Lett., 103, 081901 (2013).Google Scholar
Oliver, W.C., Pharr, G.M., Mater, J.. Res. 7, 1564 (1992).Google Scholar