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UV induced dielectric loss in AlN ceramics

Published online by Cambridge University Press:  03 March 2011

J.H. Harris  and
R.C. Enck
J.H. Harris
Affiliation:
The Carborundum Company, BP America, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, Ohio 44124
R.C. Enck
Affiliation:
The Carborundum Company, BP America, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, Ohio 44124
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Abstract

The dissipation factor of aluminum nitride ceramics (AlN), doped with various concentrations of oxygen, is probed at 1 kHz before and after exposure to UV radiation. The results of this study show that UV photogenerated carriers, which are trapped at charged oxygen impurity related defect sites, are responsible for the observed dielectric loss. A simple energy level diagram is presented that outlines trapped carrier distributions within the AlN bandgap and is consistent with the experimentally observed changes in dissipation factor as a function of time, UV exposure, and exposure to visible light, which liberates carriers from charged trap sites.

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Articles
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Journal of Materials Research , Volume 8 , Issue 10 , October 1993 , pp. 2734 - 2740
Copyright
Copyright © Materials Research Society 1993

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References

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