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Uniform and rapid nucleation of diamond via bias-assisted hot filament chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Yan Chen ,
Feng Chen  and
E. G. Wang
Yan Chen
Affiliation:
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603-5, Beijing 100080, People's Republic of China
Feng Chen
Affiliation:
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603-5, Beijing 100080, People's Republic of China
E. G. Wang
Affiliation:
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603-5, Beijing 100080, People's Republic of China
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Extract

A new method was developed to obtain high density, uniform diamond nuclei via bias-assisted hot filament chemical vapor deposition. A negative bias was applied between a mesh (installed above the filament) and the substrate to produce abundant uniform ions at the growth surface. Raman spectroscopy, scanning electron microscopy, and Auger electron microscopy were used to analyze the films obtained. The results show that a layer of diamond film with a nucleation density of 109/cm2 can be obtained after 10 min deposition under 1 Torr.

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Articles
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Journal of Materials Research , Volume 13 , Issue 1 , January 1998 , pp. 126 - 130
Copyright
Copyright © Materials Research Society 1998

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