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Thin-film compound phase formation at Fe–Ge and Cr–Ge interfaces

Published online by Cambridge University Press:  31 January 2011

O. M. Ndwandwe ,
C. C. Theron ,
T. K. Marais  and
R. Pretorius
O. M. Ndwandwe
Affiliation:
Physics Department, University of Zululand, Kwa-Dlangezwa 3886, South Africa
C. C. Theron
Affiliation:
Materials Research Group, iThemba LABS, Somerset West 7129, South Africa
T. K. Marais
Affiliation:
Physics Department, University of the Western Cape, Bellville, 7535, South Africa
R. Pretorius
Affiliation:
Physics Department, University of Stellenbosch, Stellenbosch 7600, South Africa
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Abstract

Phase formation was studied in the Fe–Ge and Cr–Ge thin-film systems by means of Rutherford backscattering spectrometry and x-ray diffraction. In the Fe–Ge system, FeGe was the first phase to form while in the Cr–Ge system, Cr11Ge8 was found to form first. The results are compared with the predictions of the effective heat of formation model. Heats of formation were calculated using the Miedema model. The effect of the transformation enthalpy term ΔHtr, used to convert a semiconducting element into a hypothetical metallic one in the Miedema model, is also discussed.

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Articles
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Journal of Materials Research , Volume 18 , Issue 8 , August 2003 , pp. 1900 - 1907
Copyright
Copyright © Materials Research Society 2003

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References

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