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Synthesis and characterization of single-crystal indium nitride nanowires

Published online by Cambridge University Press:  03 March 2011

Tao Tang ,
Song Han ,
Wu Jin ,
Xiaolei Liu ,
Chao Li ,
Daihua Zhang ,
Chongwu Zhou ,
Bin Chen ,
Jie Han  and
M. Meyyapan
Tao Tang
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089
Song Han
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089
Wu Jin
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089
Xiaolei Liu
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089
Chao Li
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089
Daihua Zhang
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089
Chongwu Zhou*
Affiliation:
Department of E.E.-Electrophysics, University of Southern California, Los Angeles, California 90089
Bin Chen
Affiliation:
Eloret Corporation, MS 229-1, NASA Ames Research Center, Moffett Field, California 94035
Jie Han
Affiliation:
Eloret Corporation, MS 229-1, NASA Ames Research Center, Moffett Field, California 94035
M. Meyyapan
Affiliation:
NASA Ames Research Center, Moffett Field, California 94035
*
a)Address all correspondence to this author. e-mail: chongwuz@usc.edu
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Abstract

InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was used to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality single-crystalline nanowires and growth rates as high as 4–10 μm/h. Precise diameter control was achieved by using monodispersed gold clusters as the catalyst. Photoluminescence and Raman studies have been carried out for the InN nanowires at room temperature. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism.

Keywords

Chemical vapor deposition (CVD)Electrical propertiesOptical properties
Type
Rapid Communications
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 423 - 426
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Neumayer, D.A. and Ekerdt, J.G.: Chem. Mater. 8 9-25 (1996).Google Scholar
2Strite, S. and Morkoc, H.: J. Vac. Sci. Technol. B 10, 1237 (1992).Google Scholar
3O’Leary, S.K., Foutz, E., Shur, M.S., Bhapkar, U.V. and Eastman, L.F.: J. Appl. Phys. 83, 826829(1998).CrossRefGoogle Scholar
4Huang, Y., Duan, X., Cui, Y. and Lieber, C.M.: Nano Lett. 2, 101 (2002).CrossRefGoogle Scholar
5Zhang, J., Zhang, L., Peng, X. and Wang, X.: J. Mater. Chem. 12, 802 (2002).CrossRefGoogle Scholar
6Liang, C., Chen, L., Hwang, J., Chen, K., Hung, Y. and Chen, Y.: Appl. Phys. Lett. 81, 22 (2002).CrossRefGoogle Scholar
7Han, S., Jin, W., Tang, T., Li, C., Zhang, D., Liu, X., Han, J. and Zhou, C.: J. Mater. Res. 18, 245 (2003).CrossRefGoogle Scholar
8Gudiksen, M.S. and Lieber, C.M.: J. Am. Chem. Soc. 122, 8801 (2000).Google Scholar
9Zubrilov, A. in Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, edited by Levinshtein, M.E., Rumyantsev, S.L., and Shur, M.S. (John Wiley & Sons Inc., 2001) pp. 49–66.Google Scholar
10Yodo, T., Yona, H., Ano, H., Nosei, D. and Harada, Y.: Appl. Phys. Lett. 80, 968 (2002).Google Scholar
11Kaczmarczyk, G., Kaschner, A., Reich, S., Hoffmann, A., Thomsen, C., As, D.J., Lima, A.P., Schikora, D., Lischka, K., Averbeck, R. and Riechert, H.: App. Phys. Lett. 76, 2122 (2000).CrossRefGoogle Scholar
12Qian, Z.G., Yu, G., Shen, W.Z., Ogawa, H., Guo, Q.X.: B Physica 318, 180 (2002).Google Scholar
13Liu, X., Li, C., Han, S., Han, J., Zhou, C.: Appl. Phys. Lett. 82, 1950 (2003).CrossRefGoogle Scholar