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Role of Yttria-stabilized Zirconia Produced by Ion-beam-assisted Deposition on the Properties of RuO2 on SiO2/Si

Published online by Cambridge University Press:  31 January 2011

Q. X. Jia ,
P. Arendt ,
J. R. Groves ,
Y. Fan ,
J. M. Roper  and
S. R. Foltyn
Q. X. Jia
Affiliation:
Materials Science and Technology Division, MS K763, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
P. Arendt
Affiliation:
Materials Science and Technology Division, MS K763, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
J. R. Groves
Affiliation:
Materials Science and Technology Division, MS K763, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Y. Fan
Affiliation:
Materials Science and Technology Division, MS K763, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
J. M. Roper
Affiliation:
Materials Science and Technology Division, MS K763, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
S. R. Foltyn
Affiliation:
Materials Science and Technology Division, MS K763, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
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Abstract

Highly conductive biaxially textured RuO2 thin films were deposited on technically important SiO2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO2 on SiO2/Si. The biaxially oriented RuO2 had a room-temperature resistivity of 37 μΔ-cm and residual resistivity ratio above 2. We then deposited Ba0.5Sr0.5TiO3 thin films on RuO2/IBAD-YSZ/SiO2/Si. The Ba0.5Sr0.5TiO3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz.

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Articles
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Journal of Materials Research , Volume 13 , Issue 9 , September 1998 , pp. 2461 - 2464
Copyright
Copyright © Materials Research Society 1998

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