Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Pan, E.T.-S.
Venezia, A.
Kolawa, E.
Molarius, J.M.
Nicolet, M.-A.
Tandon, J.L.
and
Ruiz, R.
1988.
Effect of encapsulation on the reaction between palladium and GaAs thin films.
Thin Solid Films,
Vol. 166,
Issue. ,
p.
63.
Sands, T.
1988.
Compound semiconductor contact metallurgy.
Materials Science and Engineering: B,
Vol. 1,
Issue. 3-4,
p.
289.
Shiau, F.-Y.
Zuo, Y.
Zheng, X.-Y.
Lin, J.-C.
and
Chang, Y. A.
1988.
Interfacial Reactions Between Co and GaAs.
MRS Proceedings,
Vol. 119,
Issue. ,
PAN, E.T.-S.
VENEZIA, A.
KOLAWA, E.
MOLARIUS, J.M.
NICOLET, M.-A.
TANDON, J.L.
and
RUIZ, R.
1988.
Metallurgical Coatings 1988.
p.
63.
Vitomirov, I. M.
Aldao, C. M.
Lin, Zhangda
Gao, Y.
Trafas, B. M.
and
Weaver, J. H.
1988.
Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation.
Physical Review B,
Vol. 38,
Issue. 15,
p.
10776.
Schulz, Kevin J.
and
Chang, Y. Austin
1988.
A Comparative Study of Thin-Film and Bulk Reaction Kinetics and Diffusion Path: the Ir/GaAs System.
MRS Proceedings,
Vol. 144,
Issue. ,
Yu, L. S.
Wang, L. C.
Marshall, E. D.
Lau, S. S.
and
Kuech, T. F.
1989.
The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAs.
Journal of Applied Physics,
Vol. 65,
Issue. 4,
p.
1621.
Shiau, F.-Y.
and
Chang, Y. A.
1989.
Correlations Between Electrical Properties and Solid-State Reactions in Co/N-GaAs Contacts: A Bulk and Thin-Film Study.
MRS Proceedings,
Vol. 148,
Issue. ,
Sinclair, Robert
1989.
Reactions at metal-semiconductor interfaces.
Proceedings, annual meeting, Electron Microscopy Society of America,
Vol. 47,
Issue. ,
p.
448.
Zheng, X.-Y.
Schulz, K.J.
Lin, J.-C.
and
Chang, Y.A.
1989.
Solid state phase equilibria in the PtGaAs system.
Journal of the Less Common Metals,
Vol. 146,
Issue. ,
p.
233.
Klingbeil, Jörg
and
Schmid-Fetzer, Rainer
1989.
Interaction of metals with AlAs and InAs: Estimation of ternary Al-As-M and In-As-M phase diagrams.
Calphad,
Vol. 13,
Issue. 4,
p.
367.
Zheng, X.-Y.
Lin, J.-C.
Swenson, D.
Hsieh, K.-C.
and
Chang, Y.A.
1989.
Phase equilibria of GaNiAs at 600°C and the structural relationship between γ-Ni3Ga2, γ′-Ni13Ga9 and TNi3GaAs.
Materials Science and Engineering: B,
Vol. 5,
Issue. 1,
p.
63.
Schulz, Kevin J.
Zheng, Xiang-Yun
and
Chang, Y. Austin
1989.
Interfacial reactions in the Nb/GaAs system.
Journal of Materials Research,
Vol. 4,
Issue. 6,
p.
1462.
Nicolet, M.-A.
Kolawa, E.
and
Molarius, J.
1989.
Issues in metal/semiconductor contact design and implementation.
Solar Cells,
Vol. 27,
Issue. 1-4,
p.
177.
Lin, Jen-Chwen
and
Chang, Y. Austin
1989.
Thermodynamics, Kinetics and Interface Morphology of Reactions Between Metals and GaAs.
MRS Proceedings,
Vol. 148,
Issue. ,
Singer, I. L.
and
Wandass, J. H.
1989.
Structure-Property Relationships in Surface-Modified Ceramics.
p.
199.
Palmstro/m, C. J.
Schwarz, S. A.
Yablonovitch, E.
Harbison, J. P.
Schwartz, C. L.
Florez, L. T.
Gmitter, T. J.
Marshall, E. D.
and
Lau, S. S.
1990.
Ge redistribution in solid-phase Ge/Pd/GaAs ohmic contact formation.
Journal of Applied Physics,
Vol. 67,
Issue. 1,
p.
334.
Schulz, K. J.
Zheng, X. -Y.
Lin, J. -C.
and
Chang, Y. A.
1990.
Morphological development during platinum/gallium arsenide interfacial reactions.
Journal of Electronic Materials,
Vol. 19,
Issue. 6,
p.
581.
Sinclair, R.
1990.
Study of Interfacial Reactions in Metal-Silicon and Related Systems by High-Resolution Electron Microscopy and Thermodynamic Analysis.
Materials Transactions, JIM,
Vol. 31,
Issue. 7,
p.
628.
PalmstrØM, C.J.
Harbison, J. P.
Sands, T.
Ramesh, R.
Finstad, T. G.
Mounier, S.
Zhu, J.G.
Carter, C.B.
Florez, L.T.
and
Keramidas, V.G.
1990.
Buried Metal/III-V Semiconductor Heteroepitaxy: Approaches to Lattice Matching.
MRS Proceedings,
Vol. 198,
Issue. ,