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Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum

Published online by Cambridge University Press:  31 January 2011

R. Jonnalagadda ,
D. Yang ,
B. R. Rogers ,
J. T. Hillman ,
R. F. Foster  and
T. S. Cale
R. Jonnalagadda
Affiliation:
Allied Signal Inc., 3520 Westmoor Street, South Bend, Indiana 46628–1373
D. Yang
Affiliation:
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
B. R. Rogers
Affiliation:
Department of Chemical Engineering, Vanderbilt University, Nashville, Tennessee 37235
J. T. Hillman
Affiliation:
Tokyo Electron Arizona, 2120 West Guadalupe Road, Gilbert, Arizona 85233–2805
R. F. Foster
Affiliation:
Tokyo Electron Arizona, 2120 West Guadalupe Road, Gilbert, Arizona 85233–2805
T. S. Cale
Affiliation:
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

We discuss substrate temperature ramping effects during chemical vapor deposition of aluminum on nucleation density, texture, surface roughness, and resistivity of the resulting films. Results from three different process protocols are presented. Ramping the temperature down during the deposition from 673 K resulted in a larger fraction of small nuclei compared to deposition at a constant temperature of 573 K. From among the protocols studied, the lowest surface roughness was obtained by initially depositing for a short time while ramping the temperature down from 673 K, followed by deposition at 573 K, compared to all the other films. The same process protocol resulted in the highest Al(111) texturing, highest reflectivity, and lowest resistivity.

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Articles
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Journal of Materials Research , Volume 14 , Issue 5 , May 1999 , pp. 1982 - 1989
Copyright
Copyright © Materials Research Society 1999

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