Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-11T09:53:49.099Z Has data issue: false hasContentIssue false
  • English
  • Français

Polymorphism in ZrP crystal

Published online by Cambridge University Press:  31 January 2011

Hiroshi Iwanaga ,
Takeshi Hashishin ,
Seiji Motojima ,
Masaki Ichihara  and
Shin Takeuchi
Hiroshi Iwanaga*
Affiliation:
Department of Material Science and Engineering, Faculty of Engineering, Nagasaki University 852–8521, Japan
Takeshi Hashishin
Affiliation:
Department of Material Science and Engineering, Faculty of Engineering, Nagasaki University 852–8521, Japan
Seiji Motojima
Affiliation:
Faculty of Engineering, Gifu University, Gifu 501–1193, Japan
Masaki Ichihara
Affiliation:
Institute for Solid State Physics, Tokyo University, 5–1-5, Kashiwanoha, Chiba 277–8581, Japan
Shin Takeuchi
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278–8510, Japan
*
a)Address all correspondence to this author. e-mail: iwanagah@net.nagasaki-u.ac.jp
Get access

Abstract

Electron microscopy observations of α–ZrP whiskers with the NaCl structure, grown by chemical vapor deposition at 1300 °C, showed that there exists a hexagonal structure region (a = 0.369 nm and c = 1.248 nm) near the surface of the whiskers. High-resolution lattice image observations revealed that the method of stacking the eight-layered hexagonal structure is different from the reported hexagonal β–ZrP. In addition to the eight-layered structure, 12-layered and 16-layered structures were also observed, indicating a variety of ZrP polymorphisms.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 3 , March 2003 , pp. 567 - 570
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Ripley, R.L., J. Less-Comm. Met. 4, 496 (1962).CrossRefGoogle Scholar
2.Motojima, S., Wakamatsu, T., Takahashi, Y., and Sugiyama, K., J. Electrochem. Soc. 123, 290 (1976).CrossRefGoogle Scholar
3.Irani, K.S. and Qinqerich, K.A., J. Phys. Chem. Solids 24, 1153 (1963).CrossRefGoogle Scholar
4.Fujii, M., Iwanaga, H., and Motojima, S., J. Cryst. Growth 166, 99 (1996).CrossRefGoogle Scholar
5.Motojima, S., Hirano, S., Kurosawa, K., and Iwanaga, H., J. Mater. Res. 11, 1157 (1996).CrossRefGoogle Scholar