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New method of producing well-aligned ZnO nanorods on a Si-SiO2 substrate

Published online by Cambridge University Press:  03 March 2011

N.C. Hung ,
G.Z. Wang ,
M.Y. Yau  and
Dickon H.L. Ng
N.C. Hung
Affiliation:
Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China
G.Z. Wang
Affiliation:
Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China
M.Y. Yau
Affiliation:
Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China
Dickon H.L. Ng*
Affiliation:
Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, China
*
a)Address all correspondence to this author.e-mail: dng@phy.cuhk.edu
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Abstract

Well-aligned ZnO nanorods arrays were fabricated by sintering powder Zn underneath a Si–SiO2 substrate. In this fabrication, ZnO was produced by the displacement reactions between Zn and SiO vapors. We found that these ZnO nanorods grew toward the [0001] direction. The diameter and the alignment of these nanorods strongly depended on the sintering temperature. When the temperature was increased from 740 to 800 °C, the diameter of the rods was increased from 30–70 nm to 300–700 nm, and their alignment was also improved. A model is proposed to describe the formation of these nanorods.

Keywords

SinteringCrystal growthNanoscale
Type
Rapid Communications
Information
Journal of Materials Research , Volume 19 , Issue 8 , August 2004 , pp. 2226 - 2229
Copyright
Copyright © Materials Research Society 2004

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