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Micromechanical and tribological characterization of doped single-crystal silicon and polysilicon films for microelectromechanical systems devices

Published online by Cambridge University Press:  31 January 2011

Bharat Bhushan  and
Xiaodong Li
Bharat Bhushan
Affiliation:
Computer Microtribology and Contamination Laboratory, Department of Mechanical Engineering, The Ohio State University, Columbus, Ohio 43210
Xiaodong Li
Affiliation:
Computer Microtribology and Contamination Laboratory, Department of Mechanical Engineering, The Ohio State University, Columbus, Ohio 43210
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Abstract

Microelectromechanical systems (MEMS) devices are made of doped single-crystal silicon, LPCVD polysilicon films, and other ceramic films. Very little is understood about tribology and mechanical characterization of these materials on micro- to nanoscales. Micromechanical and tribological characterization of p-type (lightly boron-doped) single-crystal silicon (referred to as “undoped”), p+-type (boron doped) single-crystal silicon, polysilicon bulk, and n+-type (phosphorous doped) LPCVD polysilicon films have been carried out. Hardness, elastic modulus, and scratch resistance of these materials were measured by nanoindentation and microscratching using a nanoindenter. Friction and wear properties were measured using an accelerated ball-on-flat tribometer. It is found that the undoped silicon and polysilicon bulk as well as n+-type polysilicon film exhibit higher hardness and elastic modulus than the p+-type silicon. The polysilicon bulk and n+-type polysilicon film exhibit the lowest friction and highest resistance to scratch and wear followed by the undoped silicon and with the poorest behavior of the p+-type silicon. During scratching, the p+-type silicon deforms like a ductile metal.

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Articles
Information
Journal of Materials Research , Volume 12 , Issue 1 , January 1997 , pp. 54 - 63
Copyright
Copyright © Materials Research Society 1997

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