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Local and Electronic Structure of Siloxene

Published online by Cambridge University Press:  31 January 2011

Ernst Z. Kurmaev ,
Sergei N. Shamin ,
David L. Ederer ,
Ursula Dettlaff-Weglikowska  and
Jörg Weber
Ernst Z. Kurmaev
Affiliation:
Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620219 Yekaterinburg GSP-170, Russia
Sergei N. Shamin
Affiliation:
Institute of Metal Physics, Russian Academy of Sciences-Ural Division, 620219 Yekaterinburg GSP-170, Russia
David L. Ederer
Affiliation:
Department of Physics, Tulane University, New Orleans, Louisiana 70118
Ursula Dettlaff-Weglikowska
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
Jörg Weber
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany
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Abstract

Silicon L2,3 x-ray emission spectra (XES) of siloxene powder samples prepared according to Wöohler and Kautsky (Wöhler and Kautsky siloxene) are presented. The results are compared with the Si L2,3 spectra of the reference compounds a-Si, c-Si, SiO2, and SiOx. A close similarity of the electronic structure of Wöhler siloxene to that of a-SiO0.43: H and of Kautsky siloxene to that of a-SiO0.87: H is found. We determine the number of oxygen atoms per Si atom at ~0.5 in Wöhler siloxene and ~0.8 in Kautsky siloxene. The relative concentrations are in good agreement with the results of infrared absorption measurements on the same samples.

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Type
Articles
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Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1235 - 1237
Copyright
Copyright © Materials Research Society 1999

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References

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