Hostname: page-component-7dd5485656-s6l46 Total loading time: 0 Render date: 2025-10-31T14:16:37.463Z Has data issue: false hasContentIssue false
  • English
  • Français

Interface structure of AlN/TiN/MgO(001) prepared by molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

X. L. Ma ,
Y. Sugawara ,
N. Shibata  and
Y. Ikuhara
X. L. Ma*
Affiliation:
Japan Fine Ceramics Center, 2–4–1 Mutsuno, Atsuta-ku, 456 Nagoya, Japan
Y. Sugawara
Affiliation:
Japan Fine Ceramics Center, 2–4–1 Mutsuno, Atsuta-ku, 456 Nagoya, Japan
N. Shibata
Affiliation:
Japan Fine Ceramics Center, 2–4–1 Mutsuno, Atsuta-ku, 456 Nagoya, Japan
Y. Ikuhara
Affiliation:
Department of Materials Science, University of Tokyo, 113 Tokyo, Japan
*
a)Address all correspondence to this author. Present address: Department of Materials Science, School of Engineering, University of Tokyo, 113 Tokyo, Japan. e-mail: ma@ceramic.mm.t.u-tokyo.ac.jp
Get access

Abstract

Thin AlN films were grown by molecular beam epitaxy on MgO(001) substrate with a thin TiN buffer layer. The as-prepared AlN/TiN/MgO(001) interfaces have been characterized by cross-sectional high-resolution electron microscopy (HREM). It is found that the thin TiN buffer layer is epitaxially grown on the MgO(001) substrate and hexagonal AlN epitaxially on the as-received TiN(001). Based on the growth orientation relationship and HREM images, atomistic structure models for the AlN/TiN interface are proposed, image simulated, and compared with experimental images.

Information

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 12 , December 1999 , pp. 4685 - 4689
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Yim, W.M., Stofko, E.J., Zanzucchi, P.J., Pankove, J.I., Etlenberg, M., and Gilbert, S.L., J. Appl. Phys. 44, 292 (1973).CrossRefGoogle Scholar
2.Edgar, J.H., J. Mater. Res. 7, 235 (1992).Google Scholar
3.Strite, S. and Morkoc, H.J., J. Vac. Sci. Technol. B10, 1237 (1992).CrossRefGoogle Scholar
4.Meng, W.J., Heremans, J., and Cheng, Y.T., Appl. Phys. Lett. 59, 2097 (1991).Google Scholar
5.Miyauchi, M., Ishikawa, Y., and Shibata, N., Jpn. J. Appl. Phys. 31, L1714 (1992).CrossRefGoogle Scholar
6.Meng, W.J., Sell, J.A., Perry, T.A., Rehn, L.E., and Baldo, P.M., J. Appl. Phys. 75, 3446 (1994).CrossRefGoogle Scholar
7.Stevens, K.S., Ohtani, A., Kinniburgh, M., and Beresford, R., Appl. Phys. Lett. 65, 321 (1994).CrossRefGoogle Scholar
8.Vispute, R.D., Narayan, J., Wu, H., and Jagannadham, K., J. Appl. Phys. 77, 4724 (1995).Google Scholar
9.Chaudhuri, J., Thokala, R., Edgar, J.H., and Sywe, B.S., J. Appl. Phys. 77, 6263 (1995).CrossRefGoogle Scholar
10.Dovidenko, K., Oktyabrsky, S., Narayan, J., and Razeghi, M., J. Appl. Phys. 79, 2439 (1996).CrossRefGoogle Scholar
11.Calleja, E., Sánchez-Garcìa, M.A., Monroy, E., Sánchez, F.J., Muñoz, E., Sanz-Hervás, A., Villar, C., and Aguilar, M.J., J. Appl. Phys. 82, 4681 (1997).Google Scholar
12.Chu, T.L., Ing, D.W., and Norieka, A.J., Solid-State Electron 10, 1023 (1967).Google Scholar
13.Yoshida, S., Mitawa, S., Fujji, Y., Tanaka, S., Hayakawa, H., Gonda, S., and Itoh, A., J. Vac. Sci. Technol. 16, 990 (1979).Google Scholar
14.Sitar, Z., Paisley, M.J., Yan, B., Davis, R.F., Ruan, J., and Choyke, J.W., Thin Solid Films 200, 311 (1991).Google Scholar
15.Rowland, L.B., Kern, R.S., Tanaka, S., and Davis, R.F., Appl. Phys. Lett. 62, 3333 (1993).CrossRefGoogle Scholar
16.Tanaka, S., Kern, R.S., and Davis, R.F., Appl. Phys. Lett. 66, 37 (1995).Google Scholar
17.Stemmer, S., Pirouz, P., Ikuhara, Y., and Davis, R.F., Phys. Rev. Lett. 77, 1797 (1996).CrossRefGoogle Scholar
18.Shuskus, A.J., Reeder, T.M., and Paradis, E.L., Appl. Phys. Lett. 24, 155 (1974).Google Scholar
19.Sexler, A., Kung, P., Sun, C.J., Bigan, E., and Razeghi, M., Appl. Phys. Lett. 64, 339 (1994).CrossRefGoogle Scholar
20.Katsikini, M., Paloura, E.C., Cheng, T.S., and Foxon, C.T., J. Appl. Phys. 82, 1166 (1997).CrossRefGoogle Scholar
21.Ikuhara, Y. and Pirouz, P., Mater. Sci. Forum 207–209, 121 (1996).CrossRefGoogle Scholar
22.Ma, X.L., Shibata, N., and Ikuhara, Y., J. Mater. Res. 14, 1597 (1999).CrossRefGoogle Scholar
23.Kilaas, R., Proceedings of the 49th Annual Meeting of the Electron Microscopy Society of America, edited by Bailey, G.W. (San Francisco Press, San Francisco, CA, 1991), p. 528.Google Scholar
24.Lembreecht, W.R.L and Segall, B., in Metal-Ceramics Interfaces, edited by Rühle, M., Evans, A.G., Ashby, M.F., and Hirth, J.P. (Pergamon Press, New York, 1990), p. 29.Google Scholar
25.Ivanov, I., Hultmn, L., Järandahl, K., Mårtensson, P., Sundgren, J-E., Hjörvarsson, B., and Greene, J.E., J. Appl. Phys. 78, 5721 (1995).CrossRefGoogle Scholar