Hostname: page-component-cb9f654ff-qc88w Total loading time: 0 Render date: 2025-09-01T09:27:08.278Z Has data issue: false hasContentIssue false
  • English
  • Français

The influence of direct current bias on the initial aging of a doped lead magnesium niobate ceramic

Published online by Cambridge University Press:  31 January 2011

Y. Wang ,
Y. C. Chan ,
Z. L. Gui  and
L. T. Li
Y. Wang
Affiliation:
Department of Materials Science & Engineering, Tsinghua University, Beijing,People's Republic of China and Department of Electronic Engineering, City University of Hong Kong, Hong Kong
Y. C. Chan
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
Z. L. Gui
Affiliation:
Department of Materials Science & Engineering, Tsinghua University, Beijing,People's Republic of China
L. T. Li
Affiliation:
Department of Materials Science & Engineering, Tsinghua University, Beijing,People's Republic of China
Get access

Abstract

The initial dielectric aging behaviors of a Mg and Mn doped lead magnesium niobate ceramic were investigated over a wide range of direct current (dc) bias. Both the dielectric constant-log(time) and the loss tangent-log(time) were regressed in terms of a linear relationship. The dc bias is found to have a strong influence on the dielectric parameters at the start of aging and to suppress the aging of dielectric constant and loss tangent. The frequency dependence of the dielectric aging is also evidently affected by the dc bias.

Information

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 3 , March 1998 , pp. 675 - 679
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Pan, W. Y., Furman, E., Dayton, G. O., and Cross, L. E., J. Mater. Sci. Lett., 5, 647 (1986).CrossRefGoogle Scholar
2.Schulze, W. A. and Kiyoshi, O., Ferroelectrics, 87, 361 (1988).CrossRefGoogle Scholar
3.Pan, W. Y., Shrout, T. R., and Cross, L. E., J. Mater. Sci. Lett. 8, 771 (1989).CrossRefGoogle Scholar
4.Pan, W. Y., Jiang, Q. Y., and Cross, L. E., Ferroelectrics 82, 111 (1988).CrossRefGoogle Scholar
5.Zhang, Q. M., Zhao, J., and Cross, L. E., J. Appl. Phys. 79, 3181 (1996).CrossRefGoogle Scholar
6.Gui, Z. L., Cui, P. S., Wang, Y., and Li, L. T., in Advanced Structural Materials, edited by Y., Han (Elsevier Science Publisher B.V., New York, 1991), p. 463.Google Scholar
7.Chen, J., Chan, H. M., and Harmer, M. P., J. Am. Ceram. Soc. 72, 593 (1989).CrossRefGoogle Scholar
8.Gui, H., Zhang, X. W., and Gui, B. L., Appl. Phys. Lett. 69, 2353 (1996).CrossRefGoogle Scholar
9.Gui, H., private communication.Google Scholar
10.Viehland, D., Jang, S. J., Cross, L. E., and Wutting, M., J. Appl. Phys. 69, 414 (1991).CrossRefGoogle Scholar
11.Burns, G. and Dacol, F. H., Ferroelectrics 104, 25 (1990).CrossRefGoogle Scholar
12.Shrout, T. R., Huebner, W., Randall, C. A., and Hilton, A. D., Ferroelectrics 93, 361 (1989).CrossRefGoogle Scholar