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Influence of Annealing on the 1.5 μm Light Emission of Er-doped ZnO Thin Films and its Crystal Quality

Published online by Cambridge University Press:  03 March 2011

Yukari Ishikawa ,
Mitsuhiro Okamoto ,
Shigeru Tanaka ,
Dai Nezaki  and
N. Shibata
Yukari Ishikawa*
Affiliation:
Japan Fine Ceramics Center, Atsuta, Nagoya 456-8587, Japan
Mitsuhiro Okamoto
Affiliation:
Japan Fine Ceramics Center, Atsuta, Nagoya 456-8587, Japan
Shigeru Tanaka
Affiliation:
Japan Fine Ceramics Center, Atsuta, Nagoya 456-8587, Japan
Dai Nezaki
Affiliation:
Japan Fine Ceramics Center, Atsuta, Nagoya 456-8587, Japan
N. Shibata
Affiliation:
Japan Fine Ceramics Center, Atsuta, Nagoya 456-8587, Japan
*
a) Address all correspondence to this author. e-mail: yukari@jfcc.or.jp
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Abstract

Intensity variation of 1.5 μm light emission at room temperature from Er-doped epitaxial and polycrystal ZnO films depending on annealing temperature (773–1373 K) was studied. As-grown Er-doped epitaxial ZnO film emitted 1.5 μm photoluminescence(PL) higher than as-grown Er-doped polycrystal ZnO. It was found that the annealing in air increases PL intensity and the maximum PL intensity was obtained by annealing at optimal temperature (1073 K). Spectrum shape and intensity of 1.5 μm PL of Er-doped epitaxial ZnO after annealing at 1073 K resembled those of Er-doped polycrystal ZnO after annealing at 1073 K. X-ray diffraction measurement demonstrated that annealing improves crystal quality of Er-doped ZnO film. We assumed that the process of 1.5 μm light emission is dependent on local area placement of Zn and O atoms around Er as well as crystal quality of ZnO.

Keywords

AnnealingEpitaxyLuminescence

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Type
Articles
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Journal of Materials Research , Volume 20 , Issue 9 , September 2005 , pp. 2578 - 2582
Copyright
Copyright © Materials Research Society 2005

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References

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