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Highly (002)-oriented ZnO film grown by ultrasonic spray pyrolysis on ZnO-seeded Si (100) substrate

Published online by Cambridge University Press:  03 March 2011

Jun-Liang Zhao ,
Xiao-Min Li ,
Sam Zhang ,
Chang Yang ,
Xiang-Dong Gao  and
Wei-Dong Yu
Jun-Liang Zhao
Affiliation:
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China; and Graduate School of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
Xiao-Min Li*
Affiliation:
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Sam Zhang
Affiliation:
School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798
Chang Yang
Affiliation:
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China; and Graduate School of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
Xiang-Dong Gao
Affiliation:
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
Wei-Dong Yu
Affiliation:
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: lixm@mail.sic.ac.cn
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Abstract

ZnO films are grown by the ultrasonic spray pyrolysis method on ZnO seeding layer deposited on Si (100) by pulsed laser deposition. The resultant film possesses a columnar microstructure perpendicular to the substrate and exhibits smooth, dense, and uniform morphology. The preferred orientation along the c-axis of the film is significantly enhanced compared to that without the seeding layer. ZnO film grown on ZnO-seeded silicon exhibits higher hall mobility, lower resisitivity, and higher photoluminescence intensity.

Keywords

Crystal growthFilmSpray pyrolysis

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Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 9 , September 2006 , pp. 2185 - 2190
Copyright
Copyright © Materials Research Society 2006

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