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High dielectric constant and small temperature coefficient bismuth-based dielectric compositions

Published online by Cambridge University Press:  31 January 2011

H. C. Ling ,
M. F. Yan  and
W. W. Rhodes
H. C. Ling
Affiliation:
AT & T Bell Laboratories, Princeton, New Jersey 08540
M. F. Yan
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
W. W. Rhodes
Affiliation:
AT & T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We have studied the crystal structure and the dielectric properties of a scries of Bi-based ceramic compositions as a function of compositional variation and sintering temperature. These dielectrics have dielectric constants hetween 70 and 165 and their temperature coefficients are within ±500 × 10−6/°C. The precise temperature coefficient can be controlled via compositional changes such that dielectrics with temperature coefficients within ±50 × 10−6/°C are easily obtainable. The room temperature dissipation factor is smaller than 0.001 or equivalently, the Q value is greater than 1000. The electrical resistivity is greater than 1014 ohm-cm. Furthermore, these dielectrics are sinterable below 960 °C, rendering it possible to use silver or high silver metallization as the internal electrode in making the multilayer ceramic capacitors.

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Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 8 , August 1990 , pp. 1752 - 1762
Copyright
Copyright © Materials Research Society 1990

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