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Heat treatment of spun-on acid-catalyzed sol-gel silica films

Published online by Cambridge University Press:  03 March 2011

T.M. Parrill
T.M. Parrill
Affiliation:
IBM Semiconductor Research and Development Center, IBM East Fishkill Facility Z/522, 1580 Route 52, Hopewell Junction, New York 12533-6531
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Abstract

SiO2 films, formed by spin coating acid-catalyzed TEOS-based sol-gel on Si substrates, were annealed at 300–1000 °C and analyzed using ellipsometry, FTIR, and in situ stress measurements. Film porosity ranged from an average of 28% before annealing to 7% after annealing 3 h at 1000 °C. Below ≍800 °C, water and silanol removal caused a decrease in refractive index and increase in the in-plane tensile stress. Infrared spectra indicated compressive strain normal to the plane, however. Above ≍800 °C, further densification and structural relaxation occurred. Exposure to H2O also caused relaxation after annealing, as the most compressed Si–O–Si units reacted preferentially with moisture.

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Articles
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Journal of Materials Research , Volume 9 , Issue 3 , March 1994 , pp. 723 - 730
Copyright
Copyright © Materials Research Society 1994

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