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Growth of epitaxial β-FeSi2 thin films by pulsed laser deposition on silicon (111)

Published online by Cambridge University Press:  03 March 2011

C.H. Olk ,
O. P. Karpenko ,
S. M. Yalisove ,
G. L. Doll  and
J.F. Mansfield
C.H. Olk
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109
O. P. Karpenko
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109
S. M. Yalisove
Affiliation:
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109
G. L. Doll
Affiliation:
Physics Department, North American Operations, Research and Development Center, General Motors Corporation, Warren, Michigan 48090-9055
J.F. Mansfield
Affiliation:
Electron Microbeam Analysis Laboratory, University of Michigan, Ann Arbor, Michigan 48109
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Abstract

Epitaxial films of semiconducting iron disilicide (β-FeSi2) have been grown by pulsed laser deposition. We find that pulsed laser deposition creates conditions favorable to the formation of films with the smallest geometric misfit possessed by this material system. In situ reflection high energy electron diffraction results indicate a layer by layer growth of the silicide. Analysis of transmission electron diffraction data has determined that the films are single phase and that this growth method reproduces the epitaxial relationship: β-FeSi2 (001) ‖ Si(111).

Type
Rapid Communications
Information
Journal of Materials Research , Volume 9 , Issue 11 , November 1994 , pp. 2733 - 2736
Copyright
Copyright © Materials Research Society 1994

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References

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