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Gd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations

Published online by Cambridge University Press:  31 January 2011

Runjin Gan ,
Fengmin Liu ,
Li Qi  and
Jizheng Wang
Runjin Gan
Affiliation:
Department of Basic Science Courses, BIM, Beijing 100085, People's Republic of China
Fengmin Liu
Affiliation:
Department of Basic Science Courses, BIM, Beijing 100085, People's Republic of China
Li Qi
Affiliation:
Department of Basic Science Courses, BIM, Beijing 100085, People's Republic of China
Jizheng Wang
Affiliation:
Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China
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Extract

Gd-doped amorphous silicon films have been prepared by the electron beam evaporation technique, employing the experimental methods of dc conductivity temperature properties, ESR (electron spin resonance) spectra, and optical band gap Eopt measurements. We have investigated the optical and electrical properties of the films. The results show that at 290 K < T < 330 K, hopping conduction in Gd impurity states near Fermi level is predominant, and at 330 K < T < 500 K extended state conduction dominates due to electrons exited from the impurity states. At a Gd concentration of about 1.0 at.% spin density Ns, peak-peak width ΔBpp and line-shape factor l of ESR spectra change their dependence on Gd contents. The optical gap of the films narrows with increasing Gd contents in the films from 1.68 eV to 0.42 eV. The results were explained on the basis of the partial compensation of Gd atoms for dangling bonds .

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 7 , July 1998 , pp. 1795 - 1798
Copyright
Copyright © Materials Research Society 1998

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