Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by Crossref.
Doll, G. L.
Sell, J. A.
Wims, A.
Taylor, C. A.
and
Clarke, R.
1990.
X-Ray Diffraction Study of Cubic Boron Nitride Grown Epitaxially on Silicon.
MRS Proceedings,
Vol. 202,
Issue. ,
Lyman, P. F.
Thevuthasan, S.
Grant, M. W.
Hoogenraad, J. H.
and
Seiberling, L. E.
1990.
Development of Pseudomorphic Structure in Ge Films Deposited on Si(100) at Low Temperatures.
MRS Proceedings,
Vol. 202,
Issue. ,
Gao, Y.
Merkle, K. L.
Chang, H. L. M.
Zhang, T. J.
and
Lam, D. J.
1990.
Electron Microscopy Study Of Mocvd-Grown Tio2Thin Films and Tio2/Al203 Interfaces.
MRS Proceedings,
Vol. 209,
Issue. ,
Shi, Yushan
and
Sutton, Mark
1991.
High Resolution X-Ray Studies of Ga1–xInxAs Epilayers on GaAs Substrates.
MRS Proceedings,
Vol. 239,
Issue. ,
Zangwillt, A.
Luset, C. N.
Vvedensky, D. D.
and
Wilby, M. R.
1991.
Epitaxial Growth and Recovery: an Analytic Approach.
MRS Proceedings,
Vol. 237,
Issue. ,
Doll, G. L.
Sell, J. A.
Taylor, C. A.
and
Clarke, R.
1991.
Growth and characterization of epitaxial cubic boron nitride films on silicon.
Physical Review B,
Vol. 43,
Issue. 8,
p.
6816.
Gao, Y.
Merkle, K. L.
Chang, H. L. M.
Zhang, T. J.
and
Lam, D. J.
1991.
Hrem Study of Heteroeprtaxial Interfaces in the TiO2/Al2O3 System.
MRS Proceedings,
Vol. 221,
Issue. ,
Karmarkar, M. M.
Padmanabhan, K. R.
Cheng, Y.-T.
and
Chen, Y. L.
1991.
Ion Channeling Study of Epitaxial Growth of α-Fe on H-Terminated Si (111) Surfaces.
MRS Proceedings,
Vol. 237,
Issue. ,
Miller, K.T.
and
Lange, F.F.
1991.
Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding.
Journal of Materials Research,
Vol. 6,
Issue. 11,
p.
2387.
Lyman, P.F.
Thevuthasan, S.
and
Seiberling, L.E.
1991.
Low temperature pseudomorphic growth of Ge on Si(100)-(2 × 1).
Journal of Crystal Growth,
Vol. 113,
Issue. 1-2,
p.
45.
Mader, W.
1991.
Structural Relaxations At Metal / Metal Oxide Interfaces.
MRS Proceedings,
Vol. 238,
Issue. ,
Cheng, Yang-Tse
Chen, Yen-Lung
Karmarkar, M. M.
and
Meng, Wen-Jin
1991.
Epitaxial Growth of α-Fe(111) ON Si(111) Studied by X-RAY Diffraction and Transmission Electron Microscopy.
MRS Proceedings,
Vol. 221,
Issue. ,
Gao, Y.
Merkle, K.L.
Chang, H.L.M.
Zhang, T.J.
and
Lam, D.J.
1991.
Microstructure of TiO2 rutile thin films deposited on (110) α−Al2O3.
Journal of Materials Research,
Vol. 6,
Issue. 11,
p.
2417.
Richards, Peter M.
1991.
Equilibrium interface width for epitaxial growth with step-height-independent hopping of adatoms.
Physical Review B,
Vol. 43,
Issue. 8,
p.
6750.
Spellman, L.M.
Glass, R.C.
Davis, R.F.
Humphreys, T.P.
Jeon, Hyeongtag
Nemanich, R.J.
Chevacharoenkul, Sopa
and
Parikh, N.R.
1991.
Heteroepitaxial Growih and Characterization of Titanium Films on Alpha (6H) Silicon Carbide.
MRS Proceedings,
Vol. 221,
Issue. ,
Chang, H.L.M.
You, H.
Guo, J.
and
Lam, D.J.
1991.
Epitaxial TiO2 and VO2 films prepared by MOCVD.
Applied Surface Science,
Vol. 48-49,
Issue. ,
p.
12.
Cheng, Yang-Tse
Chen, Yen-Lung
Karmarkar, M. M.
and
Meng, Wen-Jin
1991.
Epitaxial growth of α-Fe films on Si(111) substrates.
Applied Physics Letters,
Vol. 59,
Issue. 8,
p.
953.
Richards, Peter M.
1991.
Effect of clustering interactions on the steady-state interface width during epitaxial growth.
Physical Review B,
Vol. 43,
Issue. 9,
p.
6986.
Sasajima, Yasushi
Suzuki, Yutaka
Takeuchi, Manabu
and
Ozawa, Satoru
1991.
New approach for a computer simulation of the vacuum deposition process.
Applied Surface Science,
Vol. 48-49,
Issue. ,
p.
498.
Parkinson, B. A.
Ohuchi, F. S.
Ueno, K.
and
Koma, A.
1991.
Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials.
Applied Physics Letters,
Vol. 58,
Issue. 5,
p.
472.