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Fracture origins in LiNbO3 wafers due to postprocessing micro-repolarization

Published online by Cambridge University Press:  31 January 2011

Hirotoshi Nagata ,
Junichiro Ichikawa ,
Mitsuru Sakima ,
Kaori Shima  and
Eungi Min Haga
Hirotoshi Nagata
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-8601, Japan
Junichiro Ichikawa
Affiliation:
Optoelectronics Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-8601, Japan
Mitsuru Sakima
Affiliation:
Optoelectronics Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-8601, Japan
Kaori Shima
Affiliation:
Advanced Materials Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-8601, Japan
Eungi Min Haga
Affiliation:
Advanced Materials Research Division, New Technology Research Laboratories, Sumitomo Osaka Cement Co., Ltd., 585 Toyotomi-cho, Funabashi-shi, Chiba 274-8601, Japan
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Extract

In the process of developing electro-optic devices from ferroelectric z-cut LiNbO3 wafers, a repolarization throughout the wafer thickness occurs due to a localization of electric charges on the wafer. The repolarization not only generates microdomains causing light to scatter but also large defects in the crystal that become the origin of wafer fracture. The size of such defects is comparable to the wafer thickness (0.5 mm), and an anomaly in the chemical and crystalline structures can be found in them. X-ray diffractometry and x-ray photoelectron spectroscopy confirm that a chemical reduction in the defective region occurs.

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Articles
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Journal of Materials Research , Volume 15 , Issue 1 , January 2000 , pp. 17 - 20
Copyright
Copyright © Materials Research Society 2000

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References

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