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Four-mode behavior in an In1−x Gax AsyP1−y quaternary alloy

Published online by Cambridge University Press:  31 January 2011

H. C. Gupta ,
Geeta Sood ,
Jaishree Malhotra ,
Vijay Baboo Gupta  and
B. B. Tripathi
H. C. Gupta
Affiliation:
Indian Institute of Technology, Hauz Khas, New Delhi 110016, India
Geeta Sood
Affiliation:
Indian Institute of Technology, Hauz Khas, New Delhi 110016, India
Jaishree Malhotra
Affiliation:
Indian Institute of Technology, Hauz Khas, New Delhi 110016, India
Vijay Baboo Gupta
Affiliation:
Indian Institute of Technology, Hauz Khas, New Delhi 110016, India
B. B. Tripathi
Affiliation:
Indian Institute of Technology, Hauz Khas, New Delhi 110016, India
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Abstract

Log wavelength optical photons in a quanternary In1−x Gax AsyP1−y alloy are investigated based on the Green's function technique utilizing the concentration-dependent modified rigid ion model (MRIM). In order to obtain four-mode behavior in an A1−xBxCyD1−y quaternary alloy, formation of two cells AB and CD has been considered. In addition to the interactions betwen A, B, C, and D in their concentration ratios with a nonrandom ness parameter, the intercell and the intracell interactions are also taken into account. The results for the In1−xGaxAsyP1−y quaternary alloy are found to be in satisfactory agreement with the available experimental results.

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Journal of Materials Research , Volume 2 , Issue 3 , June 1987 , pp. 382 - 385
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1Nahory, R. E.Pollack, M. A.Johnston, W. D. Jr. , and Barns, R. L.Appl. Phys. Lett. 33, 659 (1978).CrossRefGoogle Scholar
2Restorff, J. B.Houston, B.Burke, J. R. and Hages, R. E.Appl. Phys. Lett. 32, 189 (1978).CrossRefGoogle Scholar
3Portal, J. C.Perrier, P.Renncci, M. A. S. Askenazy; Nicholas, R. J. and Pearsal, T. in the Proceedings of the Fourteenth International Conference on the Physics of Semiconductors, Edinburgh, 1978, edited by Wilson, B. L. H. (Institute of Physics, London, 1979), p. 829.Google Scholar
4Pinczuk, A.Worlock, J. M.Nahory, R. E. and Pollack, M. A.Appl. Phys. Lett. 83, 461 (1978).Google Scholar
5Amirtharaj, P. M.Holah, G. D. and Perkowitz, S.Phys. Rev. B 12, 5656 (1980).Google Scholar
6Jusserand, B. and Slempkes, S.Solid State Commun. 49, 95 (1984).CrossRefGoogle Scholar
7Soni, R. K.Abbi, S. C.Jain, K. P.Balkanski, M.Slempkes, S. and Benchimol, J. L.Appl. Phys. 59, 2184 (1986).CrossRefGoogle Scholar
8Inoshita, T.J. Appl. Phys. 56, 2056 (1984).CrossRefGoogle Scholar
9Zinger, G. M.Ipatova, I. P. and Subashiev, A. V.Sov. Phys. Semi-cond. 10, 286 (1976).Google Scholar
10Zinger, G. M.Ipatova, I. P. and Subashiev, A. V.Sov. Phys. Semi-cond. 11, 383 (1977).Google Scholar
11Zinger, G. M.Ilin, M. A. in Rashevskaya, E. P. and Ryskin, A. I.Sov. Phys. Solid State 21, 1522 (1979).Google Scholar
12Gregg, J. R. and Myles, C. W.J. Phys. Chem. Solids 46, 1305 (1985).CrossRefGoogle Scholar
13Gupta, H. C.Ahuja, G.Prakash, S.Tiwari, L. M. and Tripathi, B. B.Phys. Rev. B 28, 7191 (1983).Google Scholar
14Ahuja, G.Gupta, H. C. and Tiwari, L. M.Physica B 124, 225 (1984).CrossRefGoogle Scholar
15French, J.Saunders, J. D. and Ingle, G. W.J. Phys. Chem. 42, 265 (1938).CrossRefGoogle Scholar
16Denny, J. P.Namilton, J. H. and Lewis, J. R.J. Met. 4, 39 (1952).Google Scholar
17Svirbely, W. J. and Selis, M. S.J. Phys. Chem. 58, 33 (1954).Google Scholar
18Carles, R.Crieg, N. Saint, Renucci, J. B. and Nicholas, R. J.J. Phys. C13, 99 (1980).Google Scholar
19Chen, Y. S.Shockley, W. and Pearson, G. L.Phys. Rev. 15, 684 (1966).Google Scholar
20Pickering, C.J. Electron. Mater. 10, 901 (1981).CrossRefGoogle Scholar