Hostname: page-component-857557d7f7-v2cwp Total loading time: 0 Render date: 2025-11-25T13:18:35.955Z Has data issue: false hasContentIssue false
  • English
  • Français

Evaluation of a silicon-containing benzocyclobutene thermoset resin as a plasma etch stop

Published online by Cambridge University Press:  31 January 2011

Stephen R. Cain ,
Luis J. Matienzo  and
David W. Wang
Stephen R. Cain
Affiliation:
IBM Systems Technology Division, 1701 North Street, Endicott, New York 13760
Luis J. Matienzo
Affiliation:
IBM Systems Technology Division, 1701 North Street, Endicott, New York 13760
David W. Wang
Affiliation:
IBM Systems Technology Division, 1701 North Street, Endicott, New York 13760
Get access

Abstract

An experimental silicon-containing benzocyclobutene thermosetting resin from DOW has been evaluated for use as a plasma etch stop in packaging applications. The thermal and etch properties of this particular resin (DOW UX-13005.02L) make it suitable for use as an etch stop. Further, a model for in situ laser interferometry is proposed. By applying the model to the laser interferogram, the initial etch rate and amount of material removed before etching ceases may be determined.

Information

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 8 , August 1990 , pp. 1733 - 1738
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1Kirchoff, R. A., Patent, U. S. No. 4540763 (1985).Google Scholar
2aChuah, H. H., Tan, L-S., and Arnold, F. E., Polym. Eng. Sci. 29, 107 (1989).CrossRefGoogle Scholar
bTan, L-S. and Arnold, F. E., Am. Chem. Soc. Div. Polym. Chem. Polym. Prepr. 26, 1819 (1985).CrossRefGoogle Scholar
cTan, L-S. and Arnold, F. E., Patent, U. S. No. 4 675370 (1987).Google Scholar
3Johnson, R. W., Phillips, T. L., Hahn, S. F., Burdeaux, D. C., and Townsend, P. H., Int. Soc. of Hybrid Microelectronics Proc, 365 (Oct. 1988).Google Scholar
4 For reviews, see,Google Scholar
aOehrlein, G. S., Coyle, G. J., Tsang, J. C., Tramp, R. M., Clabes, J. G., and Lee, Y. H., in Plasma Processing, edited by Coburn, J. W., Gottscho, R. A., and Hess, D. W. (Mater. Res. Soc. Symp. Proc. 68, Pittsburgh, PA, 1986), p. 367.Google Scholar
bPoulsen, R. G., J. Vac. Sci. Technol. 14, 266 (1977).CrossRefGoogle Scholar
5aCoburn, J. W., Solid State Technol., 117 (April 1986).Google Scholar
bCoburn, J. W. and F, H., Winters, Nucl. Instrum. Methods Phys. Res. B 27, 243 (1987).CrossRefGoogle Scholar
6Ninomiya, K., Suzuki, K., Nishimatsu, S., and Okada, O.; J. Appl. Phys. 62, 1459 (1987).CrossRefGoogle Scholar
7 For a review, see Moss, S. J., Polym. Degradation and Stabil. 17, 205 (1987).CrossRefGoogle Scholar
8Turban, G. and Rapeaux, M., J. Electrochem. Soc. 130, 2231 (1983).CrossRefGoogle Scholar
9aFlamm, D. L. and Donnelly, V. M., Plasma Chem. Plasma Processes 1, 317 (1981).CrossRefGoogle Scholar
bTaylor, G. N. and Wolf, T. M., Polym. Eng. Sci. 20, 1087 (1980).CrossRefGoogle Scholar
cRembetski, J. F., Dissertation, M. S., Clarkson University (1985).Google Scholar
dCain, S. R., Egitto, F. D., and Emmi, F., J. Vac. Sci. Technol. A 5, 1578 (1987).CrossRefGoogle Scholar
10Egitto, F. D., Vukanovic, V., Emmi, F., and Horwath, R. S., J. Vac. Sci. Technol. B 3, 893 (1985).CrossRefGoogle Scholar
11aChou, N. J., Tang, C. H., Paraszczak, J., and Babich, E., Appl. Phys. Lett. 46, 31 (1985).CrossRefGoogle Scholar
bHatzakis, M., Paraszczak, J., and Shaw, J. M., in Proc. Int. Conf. on Microcircuit Engineering, ME 81, Lausanne, Switzerland, Sept. 28–20, 1981, p. 386.Google Scholar
cShaw, J. M., Hatzakis, M., Paraszczak, J., Luitus, J., and Babich, E., in Proc. Reg. Tech. Conf., Mid-Hudson Sect. Soc. Plast. Eng., Ellenville, NY, Nov. 8–10, 1982, p. 285.Google Scholar
12Paraszczak, J., Babich, E., McGouey, R., Heidenreich, J., Hatzakis, M., and Shaw, J., Microelectronic Engineering 6, 453 (1987).CrossRefGoogle Scholar
13Chou, N. J., Paraszczak, J., Babich, E., Heidenreich, J., Chaung, Y. S., and Goldblatt, R. D., J. Vac. Sci. Technol. A 5, 1321 (1987).CrossRefGoogle Scholar