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Electron microscopic interfacial analysis of diamond film grown on silicon substrate

Published online by Cambridge University Press:  31 January 2011

N. Jiang ,
A. Hatta ,
T. Ito ,
Z. Zhang ,
T. Sasaki  and
A. Hiraki
N. Jiang*
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan, and Beijing Laboratory of Electron Microscopy, Chinese Academy of Science, Beijing 100080, People's Republic of China
A. Hatta
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
T. Ito
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
Z. Zhang
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Science, Beijing 10008, People's Republic of China
T. Sasaki
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
A. Hiraki
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan
*
(a) Hiraki Laboratory, Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan.
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Abstract

We have investigated the near-interface characterization of diamond films grown on Si(100) substrates by means of a hot-filament chemical-vapor-deposition (HFCVD) method using high-resolution-electron microscopy (HREM). Atomic scale study of the diamond/Si interface reveals that on the top of the amorphous intermediate layer, there exists a precursor phase which seems to be a diamond-like structure, which provides a suitable site for subsequent diamond nucleation. High density crystal defects directly originate from the precursor phase. HREM images also reveal that during the deposition Si recrystallizes in some damaged areas left by pretreatment, such as scratching grooves. In the recrystallization process twins and microtwins can be formed, and amorphous solid is left in the Si crystals.

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Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 7 , July 1996 , pp. 1783 - 1786
Copyright
Copyright © Materials Research Society 1996

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References

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