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Effect of TiO2 doping on rapid densification of alumina by plasma activated sintering

Published online by Cambridge University Press:  31 January 2011

R. S. Mishra ,
A. K. Mukherjee ,
K. Yamazaki  and
K. Shoda
R. S. Mishra
Affiliation:
Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616
A. K. Mukherjee
Affiliation:
Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616
K. Yamazaki
Affiliation:
Department of Mechanical and Aeronautical Engineering, University of California, Davis, California 95616
K. Shoda
Affiliation:
Sodick Co. Ltd., Yokohama, Japan
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Abstract

The effects of plasma cycle and TiO2 doping on sintering kinetics during plasma activated sintering (PAS) of γ−Al2O3 have been studied in the temperature range of 1473–1823 K. Multiple plasma cycle leads to higher densification. Also, TiO2 doping enhances the sintering kinetics during PAS. In TiO2 doped specimens, near full density was obtained at 1673 K in less than 6 min using multiple plasma cycle. It is suggested that the dielectric properties of a material are critical for the success of the PAS process.

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Type
Articles
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Journal of Materials Research , Volume 11 , Issue 5 , May 1996 , pp. 1144 - 1148
Copyright
Copyright © Materials Research Society 1996

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References

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